United Microelectronics Corp.

Kun-Yuan Lo

Chih-Wei Yang

Jian-Cun Ke

Rai-Min Huang

Cheng-Guo Chen

Shao-Wei Wang

Yu-Ren Wang

Chien-Liang Lin

Chia-Fu Hsu

Ying-Wei Yen

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.

High-K metal gate process for lowering junction leakage and interface traps in NMOS transistor

A method for fabricating a field-effect transistor is provided. The method includes: forming a gate dielectric layer and a barrier layer on a substrate in sequence; forming a first silicon layer on and in contact with the barrier layer; performing a thermal treatment to form a silicide layer between the barrier layer and the first silicon layer; and forming a second silicon layer on and in contact with the first silicon layer.

Field-effect transistor and fabricating method thereof

A field-effect transistor comprises a substrate, a gate dielectric layer, a barrier layer, a metal gate electrode and a source/drain structure. The gate dielectric layer is disposed on the substrate. The barrier layer having a titanium-rich surface is disposed on the gate dielectric layer. The metal gate electrode is disposed on the titanium-diffused surface. The source/drain structure is formed in the substrate and adjacent to the metal gate electrode.

A method for fabricating silicon dioxide layer is disclosed. The method includes the following steps. Firstly, a semiconductor substrate is provided. Next, the semiconductor substrate is cleaned with a solution containing hydrogen peroxide to form a chemical oxide layer on the semiconductor substrate. Then, the chemical oxide layer is heated in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer. Then, the semiconductor substrate is heated in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer.

Growing community of inventors

Tainan, Taiwan

Kun-Yuan Lo