Richtek Technology Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

Richpower Microelectronics Corporation

Kun-Yu Lin

Shih-Shiung Chen

Ming-Chi Wu

Wei-Hsu Chang

Tzu-Chen Lin

Ta-Yung Yang

Yu-Lung Yeh

Chun-Chieh Fang

Chien Nan Tu

Hsin-Yi Wu

Chih-Teng Liao

Pei-Lun Huang

Yu-Chang Chen

Chi-Yuan Wen

Chien-Nan Tu

Yu-Ling Ko

Ji-Heng Jiang

Yi-Jen Chen

Chien-Fu Tang

Po-Lun Chen

Ming-Feng Tien

Bo-Chang Su

Yu-chang Chen

I-Chen Chen

Isaac Y Chen

Kuan-Chi Tsai

Yu-Wen Chen

Yu-Ming Chen

Kuang-Fu Chang

Shu-Chin Lee

Fu-Chuan Tsai

Ming-Hung Wu

Li-Di Lo

Yung-Chih Lai

En-Ping Lin

Hao-Yu Chang

Shih-Ho Hsu

Chia-Hsien Yang

Fu-Ciao Syu

Kai-Neng Yang

Chuang-Han Hsieh

Li-Yang Hsiao

A power supply system with power factor correction, includes: an AC rectifier, a power factor correction (PFC) conversion circuit, an asymmetric half-bridge (AHB) flyback converter and a communication protocol power delivery (PD) interface. When a power level of an adapter output power is lower than a power threshold, and a converted voltage of a converted power is higher than a first voltage threshold, the communication protocol PD interface generates a disable signal to disable a PFC conversion of the PFC conversion circuit, when the PFC conversion is disabled, the PFC conversion circuit operates a bypass coupling operation, as thus, the converted voltage is equal to a rectified voltage of a rectified power.

Power supply system with power factor correction(PFC) and control method thereof

A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

Deep trench isolation structures resistant to cracking

A boost power factor correction circuit includes: a switch and an inductor coupled to each other; a current sensing device generating a current sensing signal according to a current flowing through the switch; a temperature sensing device coupled to the inductor to generate a temperature sensing signal; and a conversion control circuit operating the switch. The conversion control circuit is an integrated circuit and includes: a shared pin coupled to the temperature sensing device and the current sensing device; and a current sensing circuit and a temperature sensing circuit which sense a multipurpose sensing signal through the shared pin. The multipurpose sensing signal is related to the current sensing signal when the switch is ON and related to the temperature sensing signal when the switch is OFF. The temperature sensing signal is related to an input voltage, an output voltage and an electrical parameter of the temperature sensing device.

High efficiency boost power factor correction circuit having shared pin and conversion control circuit thereof

A resonant flyback power converter includes: a first and a second transistors which form a half-bridge circuit for switching a transformer and a resonant capacitor to generate an output voltage; a current-sense device for sensing a switching current of the half-bridge circuit to generate a current-sense signal; and a switching control circuit generating a first and a second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal controls the half-bridge circuit to generate a positive current to magnetize the transformer and charge the resonant capacitor. The turn-on of the second driving signal controls the half-bridge circuit to generate a negative current to discharge the resonant capacitor. The switching control circuit turns off the first transistor when the positive current exceeds a positive-over-current threshold, and/or, turns off the second transistor when the negative current exceeds a negative-over-current threshold.

Resonant flyback power converter and switching control circuit and method thereof

A method includes providing a substrate having a first semiconductor material; creating a mask that covers an nFET region of the substrate; etching a pFET region of the substrate to form a trench; epitaxially growing a second semiconductor material in the trench, wherein the second semiconductor material is different from the first semiconductor material; and patterning the nFET region and the pFET region to produce a first fin in the nFET region and a second fin in the pFET region, wherein the first fin includes the first semiconductor material and the second fin includes a top portion over a bottom portion, wherein the top portion includes the second semiconductor material, and the bottom portion includes the first semiconductor material.

Fin height and STI depth for performance improvement in semiconductor devices having high-mobility p-channel transistors

A resonant asymmetrical half-bridge flyback power converter includes: a first transistor and a second transistor switching a transformer coupled to a capacitor for generating an output power; a voltage divider coupled to an auxiliary winding of the transformer; a differential sensing circuit which includes a first terminal and a second terminal coupled to the voltage divider to sense an auxiliary signal generated by the auxiliary winding for generating a peak signal and a demagnetization-time signal; and a PWM control circuit configured to generate a first PWM signal and a second PWM signal in accordance with the peak signal and the demagnetization-time signal, for controlling the first transistor and the second transistor respectively; wherein a period of an enabling state of the demagnetization-time signal is correlated to the output power level; wherein the peak signal is related to a quasi-resonance of the transformer after the transformer is demagnetized.

Resonant AHB flyback power converter and switching control circuit thereof

A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. The second driving signal includes a resonant pulse having a resonant pulse width and a ZVS pulse during the DCM operation. The resonant pulse is configured to demagnetize the transformer. The resonant pulse has a first minimum resonant period for a first level of the output load and a second minimum resonant period for a second level of the output load. The first level is higher than the second level and the second minimum resonant period is shorter than the first minimum resonant period.

A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. During a DCM (discontinuous conduction mode) operation, the second driving signal includes a resonant pulse for demagnetizing the transformer and a ZVS (zero voltage switching) pulse for achieving ZVS of the first transistor. The resonant pulse is skipped when the output voltage is lower than a low-voltage threshold.

A method for manufacturing a semiconductor device is provided. The method includes forming a material layer over a semiconductor substrate; forming a plurality of spacer masks over the material layer; patterning the material layer into a plurality of masks below the spacer masks, wherein patterning the material layer comprises an atomic layer etching (ALE) process; and etching the semiconductor substrate through the masks.

Method for manufacturing semiconductor device

In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Method of manufacturing semiconductor devices and semiconductor device

An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

Image sensor device with reflective structure

A flyback power converter circuit includes a transformer, a blocking switch, a primary side switch, a primary side controller circuit and a secondary side controller circuit. The transformer is coupled between an input voltage and an internal output voltage in an isolated manner. The blocking switch controls the electric connection between the internal output voltage and an external output voltage. In a standby mode, the internal output voltage is regulated to a standby voltage, and the blocking switch is controlled to be OFF; in an operation mode, the internal output voltage is regulated to an operating voltage, and the blocking switch is controlled to be ON, such that the external output voltage has the operating voltage. The standby voltage is smaller than the operating voltage, so that the power consumption of the flyback power converter circuit is reduced in the standby mode.

Flyback power converter and conversion controller circuit

A flyback converter includes a power transformer, a primary side switch, a secondary side switch and a controller. A secondary side switching signal has an SR pulse for achieving synchronous rectification, and a ZVS pulse for achieving zero voltage switching. The ZVS pulse is enabled according to a first characteristic of a resonance waveform, whereas, a primary side switching signal is enabled according to a second characteristic of resonance waveform. When an output current increases, the primary side switching signal is disabled during an inhibition interval, such that primary side switching signal does not overlap with the ZVS pulse, thereby preventing the primary and secondary side switches from being both conductive simultaneously. The inhibition interval is correlated with a rising edge of the primary side switching signal in a previous switching period and a resonance period of the resonance waveform.

Flyback converter and switching controller circuit and control method thereof

A flyback power converter circuit includes: a power transformer, a primary side switch and a conversion control circuit. In a DCM, during a dead time, the conversion control circuit calculates an upper limit frequency corresponding to output current according to a frequency upper limit function, and obtains a frequency upper limit masking period according to a reciprocal of the upper limit frequency, wherein the frequency upper limit masking period is a period starting from when the primary side switch is turned ON. During an upper limit selection period, the conversion control circuit selects a valley among one or more valleys in a ringing signal related to a voltage across the primary side switch as an upper limit locked valley, so that the conversion control circuit once again turns ON the primary side switch at a beginning time point of the upper limit locked valley.

Flyback converter with a variable frequency discontinuous mode and valley sensing

Growing community of inventors

Hsinchu, Taiwan

Kun-Yu Lin