Chengdu Monolithic Power Systems Co., Ltd.

Monolithic Power Systems, Inc.

Kun Yi

Yuancheng Ren

Junming Zhang

Yike Li

Siran Wang

En Li

Donald Ray Disney

Ognjen Milic

A peak sample circuit for AC voltage, including: a rectifier coupled to receive an AC voltage and to rectify the AC voltage to generate a rectified signal; a delay circuit coupled to receive the rectified signal and to delay the rectified signal to generate a delayed rectified signal; a comparison circuit coupled to receive the delayed rectified signal and to generate a square signal based on the comparison of the rectified signal and the delayed rectified signal; and a sample output circuit coupled to receive the rectified signal, wherein the sample output circuit samples the rectified signal under the control of the square signal and provides a peak sample signal representative of the peak value of the AC voltage.

Peak sample circuit for AC voltage and method thereof

An AC signal detector having: a rectify circuit having a first input terminal and a second input terminal configured to receive an AC signal, and an output terminal configured to provide a rectified signal based on the AC signal; a detecting circuit having an input terminal coupled to the output terminal of the rectify circuit to receive the rectified signal, and an output terminal configured to provide a square signal based on the rectified signal; and an unplug indicate circuit having an input terminal coupled to the detecting circuit to receive the square signal, and an output terminal configured to provide an unplug indicate signal based on the square signal.

AC signal detector and the method thereof

A high-voltage transistor device comprises a spiral resistive field plate over a first well region between a drain region and a source region of the high-voltage transistor device, wherein the spiral resistive field plate is separated from the first well region by a first isolation layer, and is coupled between the drain region and the source region. The high-voltage transistor device further comprises a plurality of first field plates over the spiral resistive field plate with each first field plate covering one or more segments of the spiral resistive field plate, wherein the plurality of first field plates are isolated from the spiral resistive field plate by a first dielectric layer, and wherein the plurality of first field plates are isolated from each other, and a starting first field plate is connected to the source region.

High-voltage transistor device

A high voltage switching device and associated method of manufacturing, the high voltage switching device having a substrate, an epitaxial layer, a source region, a drain region, a drift region, a gate oxide, a filed oxide, a gate and a snake shaped poly.

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Chengdu, China

Kun Yi