Hynix Semiconductor Inc.

Kt Corporation

Kun-Woo Park

Yong-Ju Kim

Ic-Su Oh

Hyung-Soo Kim

Tae-Jin Hwang

Hee-Woong Song

Hae-Rang Choi

Ji-Wang Lee

Jong-Woon Kim

Joon-Woon Kim

Jun-Ho Lee

Jun-Woo Lee

Jae-Min Jang

Se-Hoon Kim

Sung-Woo Han

Kwan-Weon Kim

Chang-Kyu Choi

Won-Chang Cho

Ho-Jun Jang

Il-Yong Kim

Provided are a method and apparatus for a user equipment, a core network, and a second device to enable bidirectional communication for second devices. The method of the second device may include receiving internet protocol (IP) configuration information for automatically configuring an IP version 6 (IPv6) address of the second device from a core network through a user equipment; generating the IPv6 address using information in the IP configuration information; and transmitting the generated IPv6 address to the core network through the UE.

Method and apparatus for enabling bidirectional communication for second devices

A power distributor includes a large reservoir capacitor, a switch coupled between at least one power supply line and the large reservoir capacitor, and a controller configured to turn on or off the switch based on whether a circuit block connected to the power supply line is in operation or not.

Power distributor and semiconductor device having the same

A semiconductor integrated circuit equipped with an equalizer which has a circuit structure simpler than that of a related equalizer according to an FFE scheme or a DFE scheme and is capable of preventing a noise component from being amplified. The data receiver includes a plurality of receiver units, wherein each receiver unit includes a plurality of level detectors which detect different levels, and an encoder, in which the level detectors receive data according to a clock signal having a predetermined phase difference and perform an amplification operation including an equalization function based on feedback data, thereby outputting an amplification signal, and wherein level detectors of one receiver unit receive an amplification signal, as the feedback data, from level detectors of another receiver unit that receives a first clock signal having a phase more advanced than a phase of a second clock signal received in one receiver unit.

Data receiver of semiconductor integrated circuit

A data relay apparatus according to one embodiment described herein can include a phase detection unit that can detect a phase difference between a clock output from a transmitter and a clock output from a receiver, and generate a plurality of phase detection signals, a data relay control unit that can distinguish a difference in clock timing between the clocks of the transmitter and the receiver in response to the plurality of phase detection signals, and output a relay data selection signal and a relay control clock, and a data relay unit that can transmit data output from the receiver to the transmitter in response to the relay data selection signal and the relay control clock.

Data relay apparatus and semiconductor integrated circuit having the same

A semiconductor device includes transmission lines for conveying signals and transition detectors, each of which checks whether a transmission signal on each of the plurality of transmission lines is transited. If the signal is transited, its transition shape is detected. A signal mode determining unit determines signal transmission modes between adjacent transmission lines in response to output signals from the plurality of transition detectors. Delay units are coupled to the respective transmission lines for adjusting transmission delays of the transmission signals depending on corresponding output signal from the signal mode determining units.

Semiconductor device

A semiconductor integrated circuit can include a first voltage pad, a second voltage pad, and a voltage stabilizing unit that is connected between the first voltage pad and the second voltage pad. The first voltage pad can be connected to a first internal circuit, and the second voltage pad can be connected to a second internal circuit.

Semiconductor integrated circuit

A semiconductor memory device includes a delay locked loop circuit that can control input/output timing of data according to a system clock of a high frequency. The semiconductor memory device includes a phase comparator configured to detect a phase difference between an internal clock and a reference clock to output a state signal having a pulse width corresponding to the detected phase difference, a phase adjuster configured to generate a digital code for determining a delay time corresponding to the state signal for locking a phase of the internal clock, a digital-to-analog converter configured to convert the digital code to an analog voltage, and a multiphase delay signal generator configured to delay the internal clock according to a bias voltage corresponding to the analog voltage to feed back the delayed internal clock as the internal clock and generate multiphase delay signals.

Delay locked loop circuit of semiconductor device

A receiver circuit for sensing and transmitting input data in sync with a plurality of clock signals having mutually different phase sequentially enabled comprising a sense amplifier configured to receive, as offset voltages, first signals which can be obtained by amplifying the input data in sync with a first clock signal of the plurality of clock signals, being driven in sync with a second clock signal enabled subsequently to the first clock signal, and outputting second signals, and a discharging controller configured to control a discharging speed of the sense amplifier according to the offset voltages to control a driven speed of the sense amplifier.

Receiver circuit for use in a semiconductor integrated circuit

An apparatus for removing crosstalk in a semiconductor memory device includes pads for receiving externally provided signals, transmission lines for delivering the signals received by each of the pads to corresponding elements in the apparatus, and capacitors, coupled between adjacent ones of the lines, for adjusting the transmission delay of the signals depending on a signal transmission mode between the adjacent lines.

Apparatus for removing crosstalk in semiconductor memory device

A receiver circuit is capable of improving its operating characteristics. The receiver circuit includes a variable converter configured to output off-set control voltages in a first output range in a first operation mode and output the off-set control voltages in a second output range in a second operation mode according to a test mode activation signal, and a sense amplifier configured to sense input data based on a sensitivity, wherein the sensitivity is controlled by the off-set control voltages.

Receiver circuit

A receiver circuit capable of controlling setup/hold time includes a first phase transmission unit configured to generate a first output signal by detecting input data according to plural detection levels while being synchronized with a first clock signal, and controlling setup/hold time of the first output signal based on a level of a first offset voltage, a level converter configured to control a voltage level of the first output signal according to a first code, and a second phase transmission unit configured to receive an output signal of the level converter for as a second offset voltage while being synchronized with a second clock signal, to generate a second output signal by detecting the input data according to the detection levels, and to control setup/hold time of the second output signal.

Receiver circuit of semiconductor memory apparatus

A receiver circuit includes an offset control signal generating unit that outputs a plurality of offset control signals using an offset voltage. A sense amplifier receives a first current and a second current generated on the basis of an up input signal and a down input signal, respectively, converts the first current and the second current into an up compensating signal and a down compensating signal having electric potentials compensating the offset voltage, and amplifies the up compensating signal and the down compensating signal to output an up output signal and a down output signal.

Receiver circuit having compensated offset voltage

A data output circuit for a semiconductor memory apparatus includes a driver control signal generating unit that has a plurality of control signal generating units, each of which generates a driver unit control signal in response to a test signal during a test, and generates the driver unit control signal according to whether or not a fuse is cut after the test is completed, a first driver that has a plurality of driver units, each of which is activated in response to the driver unit control signal to drive a first data signal as an input signal and to output the driven first data signal to an output node, a signal combining unit that generates a first driver control signal in response to the driver unit control signal and an enable signal, and a second driver that has a plurality of driver units, each of which is activated in response to the first driver control signal to drive a second data signal as an input signal and to output the driven second data signal to the output node, and the number of driver units being two or more times as much as the number of driver units in the first driver. A voltage level on the output node is the voltage level of an output signal.

Data output circuit for semiconductor memory apparatus

A PLL circuit includes a phase detector that compares the phase of an input clock and the phase of a feedback clock and generates a pull-up control signal and a pull-down control signal. A loop filter pumps a voltage in response to the pull-up and pull-down control signals, filters the pumped voltage, and outputs a control voltage. A voltage controlled oscillator receives the control signal and oscillates an output clock. A clock divider divides the frequency of the output clock at a predetermined rate to generate the feedback clock. In the PLL circuit, the loop filter includes a compensator that compensates for a variation.

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Gyeonggi-do, South Korea

Kun-Woo Park