Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Kun Tack Lee

Seung Min Shin

Hun Jae Jang

Young-Hoo Kim

Yong Jun Choi

Seok Hoon Kim

Tae-Hong Kim

Ji Hoon Cha

In Gi Kim

Seongkeun Cho

Jinwoo Lee

Sung Hyun Park

Seo Hyun Kim

Tae Min Earmme

Eun Hee Jeang

Young Hoo Kim

Yong Hee Lee

Young Chan Kim

Ji Hwan Park

Hee Young Park

Pil Kyun Heo

Sang Jin Park

Sang Jine Park

Mi Yeon Park

Byoung Ho Kwon

Joon Ho Won

Jin Yeong Sung

Jin Hyung Park

Ji Hoon Jeong

Jang Jin Lee

Jung Min Oh

Myung-Ki Hong

Hae Won Choi

Koriakin Anton

Chun Hyung Chung

Seung Ho Kim

Hyun Woo Nho

Jung Hyuk Jang

In Kwang Bae

Yong Jhin Cho

There is provided a semiconductor memory device capable of improving the performance and/or the reliability of a device. The semiconductor memory device includes a substrate having a cell area and a peripheral area defined along a periphery of the cell area, wherein the cell area includes an active area defined by a cell element separation film, a cell area separation film in the substrate and defining the cell area, and a plurality of storage contacts connected to the active area, and arranged along a first direction. The plurality of storage contacts includes a first storage contact, a second storage contact, and a third storage contact, wherein the second storage contact is between the first storage contact and the third storage contact, each of the first storage contact and the third storage contact contains or surrounds or defines an airgap, and the second storage contact is free of an airgap.

Semiconductor memory device and method for manufacturing the same

A substrate drying apparatus includes; a drying chamber configured to load a substrate and including a lower chamber and an upper chamber above the lower chamber, a supply port configured to supply a supercritical fluid into the drying chamber and including a main supply port and a sub-supply port horizontally spaced apart from the main supply port, wherein the main supply port penetrates a center portion of the upper chamber, and a first buffer member coupled to the upper chamber, vertically separated from the sub-supply port, and vertically overlapping the sub-supply port, such that supercritical fluid vertically introduced into the drying chamber through the sub-supply port is impeded by the first buffer member to change a flow direction for the supercritical fluid.

Substrate drying apparatus and semiconductor device manufacturing method using same

A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

Wafer cleaning apparatus and wafer cleaning method using the same

A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

A chemical mechanical polishing method is provided. A chemical mechanical polishing method comprising providing a polishing pad, supplying a first purging compound having a first temperature onto the polishing pad, supplying a first slurry having a third temperature onto the polishing pad supplied with the first purging compound, supplying a second purging compound having a second temperature lower than the first temperature onto the polishing pad, and supplying a second slurry having a fourth temperature lower than the third temperature onto the polishing pad supplied with the second purging compound.

Chemical mechanical polishing apparatus, chemical mechanical polishing method and method for fabricating semiconductor device

An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

Apparatus and method for treating substrate including process chambers and transfer chamber

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Wafer cleaning apparatus, method for cleaning wafer and method for fabricating semiconductor device

A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

Multi-chamber apparatus

A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.

Wafer cleaning equipment

A chemical liquid supply apparatus includes a storage container configured to accommodate a chemical liquid for processing a semiconductor substrate, a chemical liquid supply pipe, a supply nozzle, and a grounding conductor. A conductive layer including a non-metallic conductive material is formed on an inner surface of the chemical liquid supply pipe. The supply nozzle includes a non-metallic conductive material. The conductive layer or the supply nozzle is electrically connected to the grounding conductor which is grounded to an outside of the pipe.

Chemical liquid supply apparatus and semiconductor processing apparatus having the same

Growing community of inventors

Suwon-si, South Korea

Kun Tack Lee