Samsung Electronics Co., Ltd.

Pukyong National University

Kun-Tack Lee

Hyo-San Lee

Jung-Min Oh

Woo-Gwan Shim

Ji-Hoon Jeong

Young-Hoo Kim

Bo-un Yoon

Yong-Sun Ko

Dae-Hyuk Kang

Chang-ki Hong

Jeong-Nam Han

Yong-Jhin Cho

Ji-Hoon Cha

Chang-Ki Hong

Kwon-Taek Lim

Il-Sang Lee

Ha-Soo Hwang

Haldorai Yuvaraj

Jae-Mok Jung

Jung-Won Lee

Byung-Kwon Cho

Im-Soo Park

Dong-Gyun Han

Chang-Gil Ryu

Yeon-Jin Gil

Yong-Myung Jun

Sang-Won Bae

Jong-Won Lee

Sang-Jin Hyun

Sang-Jine Park

Hoon-Joo Na

Sang-Yong Kim

Byoung-ho Kwon

Seok-Hoon Kim

Hyung-seok Hong

In-Gi Kim

Hag-ju Cho

Jae-Kwang Choi

Chang-Sup Mun

So-Ra Han

Seong-Ho Moon

Yu-Kyung Kim

Sol Han

Jin-Suk Hong

Hong-Jin Kim

Keon-Sik Seo

Sang-won Bae

Sang-jine Park

Ho-wook Choi

Young-hoo Kim

A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Substrate processing apparatus and apparatus for manufacturing integrated circuit device

A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

Method of removing chemicals from a substrate

A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under a supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

Method of treating substrates using supercritical fluids

A source supplier includes a source reservoir that contains a liquefied source fluid for a supercritical process, a vaporizer that vaporizes the liquefied source fluid into a gaseous source fluid under high pressure, a purifier that removes organic impurities and moistures from the gaseous source fluid and an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid. Moisture and organic impurities are removed from the source fluid to reduce the moisture concentration of the supercritical fluid in the supercritical process.

Source supplier for a supercritical fluid, substrate processing apparatus having the same

A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Spot heater and device for cleaning wafer using the same

Disclosed are an apparatus for treating a substrate and a method of treating substrates. The apparatus includes an inlet valve through which a supercritical fluid flows into the process chamber until an inner pressure of the process chamber reaches a first pressure and a turbulent flow generator turbulently supplementing the supercritical fluid into the process chamber until the inner pressure of the process chamber is recovered to the first pressure. A pressure drop module partially removes a supercritical mixture from the process chamber until the inner pressure of the process chamber is dropped to the second pressure. A pressure drop mode and a supplemental mode may be alternately repeated by the flow controller.

Apparatus for treating substrates using supercritical fluids, substrate treatment system including the same and method of treating substrates using the same

A sealing member includes a body having a ring shape, a lower contacting portion protruding from a lower end of the body and having at least one recess, the recess provided in a lower surface of the lower contacting portion and extending in a radial direction of the body, and an outer contacting portion protruding outwards from the body along an outer side portion of the body.

Sealing member and substrate processing apparatus including the same

Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

Apparatus for treating wafers using supercritical fluid

A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.

Cleaning solution composition and method of cleaning semiconductor device using the same

In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.

Substrate processing method and substrate processing system for performing the same

Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods

In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.

Integrated circuit capacitors having sidewall supports

A pad conditioning disk, a pre-conditioning unit, and a CMP apparatus having the same are provided. The pad conditioning disk includes a base in which mountain-type tips and valley-type grooves are repeatedly connected to each other, and a cutting layer formed on the base layer. The cutting layer including conditioning particles deposited on surfaces of the tips and grooves. A surfaces roughness of conditioning particles deposited on the surfaces of the tips is less than a surface roughness of conditioning particles deposited on the surfaces of the grooves.

Chemical mechanical polishing apparatus having pad conditioning disk and pre-conditioner unit

Growing community of inventors

Suwon-si, South Korea

Kun-Tack Lee