Electronics and Telecommunications Research Institute

Kun Sik Pakr

Sang Gi Kim

Yong Sun Yoon

Bo Woo Kim

Jin Gun Koo

Seong Wook Yoo

Jong Moon Park

Yoon Kyu Bae

Byung Won Lim

Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.

Semiconductor photodetector for detecting light having a wavelength in the ultraviolet blue ranges

Growing community of inventors

Daejon-Shi, South Korea

Kun Sik Pakr