Taiwan Semiconductor Manufacturing Comp. Ltd.

Windtop Technology Corp.

Kun-Lung Chen

Chan-Hong Chern

Hung-Jen Liao

Jui-Cheng Huang

Cheng-Hsiang Hsieh

Tung-Tsun Chen

Shine Chung

Yung-Lung Lin

Yu-Jie Huang

Dao-Ping Wang

Tysh-Bin Liu

Lee-Chung Lu

Chen-Jong Wang

Shou-Gwo Wuu

Jui-Jen Wu

Chien-Hua Huang

Ming Hsien Tsai

Yung-Chin Hou

Chun-Yao Chen

Chun-Yi Yang

Cliff Hou

Chung S Wang

Yi-Ching Lin

Chen Yen-Huei

Yu-Chun Wu

Ping Yang

Ruo-Rung Huang

Yu-Ann Lai

Yen-Huei Chen

Cheng Hung Lee

An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side GaN FET, a high side driver coupled to a gate of the high side GaN FET, a low side driver coupled to a gate of the low side GaN FET, and a driver circuit coupled to the high side and low side drivers and configured to generate drive signals capable of driving the high and low side GaN FETs, wherein the high and low side GaN FETs and transistors, within the high and low side drivers and the driver circuit, are patterned on a same semiconductor device layer during a front-end-of-line (FEOL) process.

GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation

A circuit includes a temperature-sensitive voltage divider. The temperature-sensitive voltage divider includes a temperature-sensitive resistor and a second resistor having a first terminal coupled to a first terminal of the temperature-sensitive resistor. A temperature signal is generated at a first node coupled to the first terminal of the temperature-sensitive resistor. Detection logic is coupled to the first node to generate a detection signal responsive to the temperature signal.

Temperature protection circuit

Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.

Dynamic high voltage (HV) level shifter with temperature compensation for high-side gate driver

A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.

Semiconductor device for determining a biomolecule characteristic

Devices, systems, and methods are provided for generating a high, dynamic voltage boost. An integrated circuit (IC) includes a driving circuit having a first stage and a second stage. The driving circuit is configured to provide an overdrive voltage. The IC also includes a charge pump circuit coupled between the first stage and the second stage. The charge pump circuit is configured generate a dynamic voltage greater than the overdrive voltage. The IC also includes a bootstrap circuit coupled to the charge pump circuit, configured to further dynamically boost the overdrive voltage of the driving circuit.

Generating high dynamic voltage boost

An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

On-chip heater

Growing community of inventors

Chu-Pei, Taiwan

Kun-Lung Chen