Sino-american Silicon Products Inc.

Kun-Lin Yang

Wen-Ching Hsu

Jiunn-Yih Chyan

Chun-Yen Peng

Hung-Chi Chien

Jian-Jhih Li

Bo-Wen Lin

Yi-Shan Hsieh

Bo-Hsiang Tseng

The instant disclosure relates to a nanostructuring process for an ingot surface prior to the slicing operation. A surface treatment step is performed for at least one surface of the ingot in forming a nanostructure layer thereon. The nanostructure layer is capable of enhancing the mechanical strength of the ingot surface to reduce the chipping ratio of the wafer during slicing.

Nanostructuring process for ingot surface, water manufacturing method, and wafer using the same

A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 &#x3bc;m. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has a first base angle and a second base angle, wherein the second base angle is larger than the first base angle, and the second base angle is 50&#xb0; to 70&#xb0;. This LED substrate has high light-emitting efficiency.

Light emitting diode substrate and light emitting diode

The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.

Epitaxial substrate, semiconductor light-emitting device using such epitaxial substrate and fabrication thereof

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Hsinchu, Taiwan

Kun-Lin Yang