Samsung Electronics Co., Ltd.

Kun-Hyung Lee

Hun-Jung Yi

Jung-Dae Park

Yo-Han Ahn

Sun-Yong Lee

Soo-Woong Lee

Mi-Ae Kim

Dong-Seok Ham

Hee-Sun Chae

Jung-Sung Hwang

Tae-Hyo Choi

Jae-Hyung Jung

Hyun-Ho Cho

Young Sub You

Jae-Hyun Yang

Seung-Yeon Cho

Kyoung-Ho Park

Hyeogi-Ki Kim

Gui-Young Cho

Hong-Hee Jeong

A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH) and a chlorine ion (Cl).

Semiconductor wet etchant and method of forming interconnection structure using the same

In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat treatment equipment also comprises a hollow pressure control member interposed between the process tube and the exhaust duct, the pressure control member being operatively connected to the process tube and the exhaust duct respectively, and including one or a number of openings. Negative pressure is avoided in the process tube during heat treatment processes so that unwanted gas and impurities cannot enter the process tube from outside.

Heat treatment equipment

An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.

Apparatus and method for processing wafers

A surface acoustic wave gas sensor for detecting predetermined substances includes a piezoelectric substrate, an input transducer and an output transducer which is formed on the piezoelectric substrate, and a sensitive film which is formed between the input transducer and the output transducer and detects at least one of acetone, benzene, dichloroethane, ethanol, and toluene. The sensitive film includes mercaptoundecanoic acid and CMP composed of cellulose nitrate, dibutyl phthalate, compound of benzene and ethanol, ethyl acetate. The surface acoustic wave gas sensor can quickly detect even small amounts of these substances.

Sensitive substance and surface acoustic wave gas sensor using the same

A cassette table on which a wafer cassette is supported allows static electricity to be discharged from the cassette and hence, form the wafers disposed in the cassette. The cassette table includes a top plate, a cassette supporter that is mounted on the top plate and supports the cassette. At least part of the cassette supporter is made of a material that allows static electricity to be discharged to ground therethrough.

Cassette table of a semiconductor fabricating apparatus

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Gyeonggi-do, South Korea

Kun-Hyung Lee