United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Kun-Hsin Chen

Li-Wei Feng

Shih-Hung Tsai

Jyh-Shyang Jenq

Tsuo-Wen Lu

YI-Fan Li

Po-Chun Chen

Tong-Jyun Huang

Nan-Yuan Huang

Hsuan-Tung Chu

Chien-Hung Chen

Chun-Yuan Wu

Yu-Ru Yang

Shih-Hsien Huang

Huai-Tzu Chiang

Tien-I Wu

A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, in which a width of the second trench is greater than a width of the first trench; forming a first liner in the first trench and the second trench; forming a second liner on the first liner as the second liner completely fills the first trench and partly fills the second trench; and planarizing the second liner and the first liner to form a first isolation structure and a second isolation structure.

Method for fabricating semiconductor device

A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner in the first trench and the second trench; forming a second liner on the first liner, wherein the second liner completely fills the first trench and partly fills the second trench; and planarizing the second liner and the first liner to form a first isolation structure and a second isolation structure.

Semiconductor device and method for fabricating the same

A semiconductor structure including a semiconductor substrate and at least a fin structure formed thereon. The semiconductor substrate includes a first semiconductor material. The fin structure includes a first epitaxial layer and a second epitaxial layer formed between the first epitaxial layer and the semiconductor substrate. The first epitaxial layer includes the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. The second epitaxial layer includes the first semiconductor material and the second semiconductor material. The second epitaxial layer further includes conductive dopants.

Semiconductor structure and manufacturing method thereof

A semiconductor device preferably includes a substrate, a fin-shaped structure on the substrate, a buffer layer on the fin-shaped structure, and an epitaxial layer on the buffer layer. Preferably, the buffer layer is made of silicon germanium and including three or more than three elements. The buffer layer also includes dopants selected from the group consisting of P, As, Sb, Bi, C, and F.

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a recess in the substrate; forming a buffer layer in the recess; forming an epitaxial layer on the buffer layer; and removing part of the epitaxial layer, part of the buffer layer, and part of the substrate to form fin-shaped structures.

Growing community of inventors

Pingtung County, Taiwan

Kun-Hsin Chen