Globalfoundries Inc.

Kun-Hsien Lin

Ran Yan

Nicolas Sassiat

Jan Hoentschel

Alban Zaka

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method includes providing a semiconductor substrate, defining a length on the semiconductor substrate corresponding to opposing vertices of a nanowire, removing a portion of the semiconductor substrate to provide a first fin structure and a second fin structure, etching a first cavity proximate to the first side, depositing a protective layer in the first cavity, removing a portion of the protective layer to expose a portion of the semiconductor substrate, and etching a second cavity at the exposed semiconductor substrate where the first and second cavities communicate. The first and second fin structures are adjacent where the length of the first fin structure corresponds to the opposing vertices and has a first side and a second side.

Integrated circuits and methods of fabrication thereof

Integrated circuits with electrical components near shallow trench isolations and methods for producing such integrated circuits are provided. The method includes forming a trench is a substrate, where the trench has a trench surface. A barrier layer including silicon and germanium is formed overlying the trench surface. A shallow trench isolation is then formed with a core overlying the barrier layer, where the core includes a shallow trench isolation insulator.

Growing community of inventors

Dresden, Germany

Kun-Hsien Lin