Taiwan Semiconductor Manufacturing Comp. Ltd.

Kun-Hsiang Lin

Ming-Te Chen

Yi-Hann Chen

Lee-Te Tseng

Chih-Hsien Ou

Shih-Chang Chen

Cheng-Chien Li

The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.

Grounded metal ring structure for through-silicon via

Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.

Adjusting intensity of laser beam during laser operation on a semiconductor device

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Taipei, Taiwan

Kun-Hsiang Lin