Lextar Electronics Corporation

Kun-Fu Huang

Kuo-Lung Fang

Te-Chung Wang

Chun-Jong Chang

Jun-Rong Chen

Jui-Yi Chu

Chi-Wen Kuo

A light emitting diode includes a substrate, a first semiconductor layer, a luminous layer, a second semiconductor layer, a current diffusion layer, a third semiconductor layer, a first electrode, a second electrode, and an insulation layer. The first semiconductor layer is formed above the substrate. The luminous layer is formed on the first semiconductor layer, and exposes a portion of the first semiconductor layer. The second semiconductor layer is formed on the luminous layer. The current diffusion layer is formed on the second semiconductor layer. The third semiconductor layer is formed on the current diffusion layer. The first electrode is formed on the first semiconductor layer. The second electrode includes a base portion formed on the surface of the substrate, and plural comb structures extending upward vertically. Each tip of the comb structure is in the third semiconductor layer. The insulation layer exposes the tip of each comb structure.

High illumination efficiency light emitting diode

A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

Light-emitting diode chip structure and fabrication method thereof

A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T, and the barrier layers are formed at a growth temperature T, where T&#x3c;T. Then, a second type doped semiconductor layer is formed on the light emitting layer.

Growing community of inventors

Miaoli County, Taiwan

Kun-Fu Huang