Industrial Technology Research Institute

Kun-Fong Lin

Chih-Ming Lai

Wen-Yung Yeh

Yen-Hsiang Fang

Chen-Peng Hsu

Rong Xuan

Chen-Kun Chen

Yih-Der Guo

Chih-Hao Hsu

Chu-Li Chao

Kuo-Jui Lin

Jyh-Shyang Wang

Yi-Tsuo Wu

Nikolai A Maleev

Daniil Alexandrovich Livshits

Ruey-Chyn Yeh

A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.

Substrate structure and fabrication thereof, and light emitting diode devices fabricated from the same

A light emitting device with magnetic field includes a light emitting device, a thermal conductive material layer and a magnetic layer. The thermal conductive material layer is coupled with the light emitting device to dissipate heat generated by the light emitting device. The magnetic layer is coupled with thermal conductive material layer to produce a magnetic filed on the light emitting device.

Light emitting device with magnetic field

A multiwavelength quantum dot laser element is provided. A perpendicular stack of quantum dot active regions with different light emitting wavelengths is employed, and thickness, material composition, and quantum dot size of each of the quantum dot active regions are modulated, so as to form various laser oscillation conditions. When a current applied to the quantum dot laser element is larger than the start-oscillation current condition, lasers with different wavelengths are simultaneously obtained in each of the quantum dot active regions, thereby achieving the application of the multiwavelength quantum dot laser element.

Multiwavelength quantum dot laser element

A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.

VCSEL and the fabrication method of the same

Growing community of inventors

Hsinchu, Taiwan

Kun-Fong Lin