Epistar Corporation

Kun-De Lin

Yi-Ming Chen

Tzu-Chieh Hsu

Chun-Yu Lin

Yao-Ning Chan

Chih-Chiang Lu

Tsung-Hsien Yang

Chao-Hsing Chen

Jia-Kuen Wang

Wen-Luh Liao

Wen-Hung Chuang

Tzu-Yao Tseng

Bo-Jiun Hu

Tsung-Hsun Chiang

Min-Yen Tsai

Kuan-Yi Lee

A light-emitting element, comprises a light-emitting stack comprising an active layer; a window layer on the light-emitting stack, wherein the window layer has a surface opposite to the light-emitting stack; and an insulative layer on the surface, wherein the surface comprises a cavity and the insulative layer substantially conformally covering the cavity, and wherein the insulative layer has a first refractive index equal to or smaller than 1.4.

Light-emitting element

A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.

Semiconductor light-emitting device

A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.

Optoelectronic device and the manufacturing method thereof

Growing community of inventors

Hsinchu, Taiwan

Kun-De Lin