Au Optronics Corporation

Neo Solar Power Corp.

Industrial Technology Research Institute

Ili Technology Corporation

Au Optrinics Corp.

Kun-Chih Lin

Chia-Tien Peng

An-Thung Cho

Chien-Sen Weng

Chih-Wei Chao

Ching-Chieh Shih

Long-Sheng Liao

Yi-Wei Chen

Chrong-Jung Lin

Ya-Chin King

Chih-Chiang Chen

Feng-Yuan Gan

Wen-Chi Wu

Tzu-Chin Hsu

Chia-Pang Kuo

Yuan-Jun Hsu

Hang-Wei Tseug

Han-Cheng Lee

Ming-Huang Chuang

Wen-Jen Chiang

Yu-Cheng Chen

Ming-Hsien Lee

Ching-Sang Chuang

Chen-Yueh Li

Pi-Fu Chen

Jau-Min Ding

Chih-Yang Chen

Chung-Shu Chang

Yi-Wen Tseng

Hsin-Chiao Luan

Chen-Chou Hsu

Chih-Hung Liao

Wen-Yu Huang

Electrode of a solar cell substrate

A solar cell includes a semiconductor substrate, a passivation layer, a back electrode layer, and several bus bars. The semiconductor substrate has an upper surface and a lower surface opposite with each other. The passivation layer is disposed at the lower surface and includes several blank regions and several first openings. Each first opening is not located in the blank regions. The bus bars are respectively disposed on the blank regions of the passivation layer. The back electrode layer is disposed on the passivation layer and electrically connected to the semiconductor substrate through the first openings. The back electrode layer includes several second openings corresponding to the bus bars, respectively. The size of each second opening is not greater than the size of the corresponding bus bar, so that the back electrode layer is electrically connected to the bus bars.

Solar cell

One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel

A solar cell includes a crystalline silicon semiconductor substrate, an intrinsic amorphous silicon semiconductor layer, an amorphous silicon semiconductor layer and a transparent conductive layer. The crystalline silicon semiconductor substrate possesses a first doped type and a trench is formed thereon to form an enclosed area to define a first electrode region in the enclosed area and a second electrode region out of the enclosed area. The intrinsic amorphous silicon semiconductor layer, the amorphous silicon semiconductor layer and the transparent conductive layer are formed sequentially on the crystalline silicon semiconductor substrate and in the trench. Having discontinuity in the trench, the amorphous silicon semiconductor layer, the amorphous silicon semiconductor layer and the transparent conductive layer provide an isolation function between the previously defined first and second electrode regions.

Solar cell and manufacturing method thereof

A capacitance difference detecting circuit with a control circuit, a first capacitor, a second capacitor, a voltage control unit and a computing device. The control circuit generates a control signal according to a first voltage and a second voltage. The voltage control unit cooperates with the first capacitor to be detected and the second capacitor to be detected, according to the control signal, to generate the first voltage and the second voltage. The computing device computes a capacitance difference between the first capacitor to be detected and the second capacitor to be detected according to the first voltage, the second voltage and a parameter of the voltage control unit.

Capacitance difference detecting circuit

A method for fabricating a TFT array substrate including the following steps is provided. A substrate having a pixel region and a photosensitive region is provided. A first patterned conductive layer is formed on the substrate, wherein the first patterned conductive layer includes a gate electrode disposed in the pixel region and a first electrode disposed in the photosensitive region, and a photosensitive dielectric layer is formed on the first electrode. A gate insulation layer is formed to cover the gate electrode, the photosensitive dielectric layer and the first electrode. A patterned semiconductor layer is formed on the gate insulation layer above the gate electrode. A source electrode and a drain electrode are formed on the patterned semiconductor layer at two sides of the gate electrode, wherein the gate electrode, the source electrode, and the drain electrode constitute a TFT. A second electrode is formed on the photosensitive dielectric layer.

Thin film transistor array substrate and method for fabricating the same

A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Manufacturing method of thin film transistor array substrate and liquid crystal display panel

A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.

Method of forming optical sensor

A capacitance difference detecting circuit includes a control circuit, for generating a control signal according to a first voltage and a second voltage; a first capacitor to be detected; a second capacitor to be detected; a first constant capacitor, having a terminal coupled to the first terminal of the first capacitor to be detected and the first input terminal; a second constant capacitor, having a terminal coupled to the first terminal of the second capacitor to be detected and the second input terminal; a voltage control unit, cooperating with the first capacitor to be detected, the second capacitor to be detected, the first constant capacitor and the second constant capacitor to control the first voltage and the second voltage. The voltage control unit is an adjustable capacitor and a capacitance value of the adjustable capacitor is controlled by the control signal.

Capacitance difference detecting circuit and capacitance difference detecting method

An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.

Optical reflected touch panel and pixels and system thereof

A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Buffer layer for promoting electron mobility and thin film transistor having the same

A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

Photo detector and method for forming thereof

A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.

Photo detector and a display panel having the same

An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.

Optical sensor

A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.

Growing community of inventors

Hsinchu, Taiwan

Kun-Chih Lin