Winbond Electronics Corporation

Other

Windbond Electronics Corp.

Kun-Che Wu

Tsung-Wei Lin

Chun-Sheng Wu

Kao-Tsair Tsai

Chun-Yen Liao

Cheng-Ta Yang

A pick-up structure for a memory device and method for manufacturing memory device are provided. The pick-up structure includes a substrate and a plurality of pick-up electrode strips. The substrate has a memory cell region and a peripheral pick-up region adjacent thereto. The pick-up electrode strips are parallel to a first direction and arranged on the substrate in a second direction. The second direction is different from the first direction. Each pick-up electrode strip includes a main part in the peripheral pick-up region and an extension part extending from the main part to the memory cell region. The main part is defined by fork-shaped patterns of a first mask layer. The extension part has a width less than that of the main part, and the extension part has a side wall surface aligned with a side wall surface of the main part.

Pick-up structure for memory device and manufacturing method thereof

A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.

Semiconductor device and manufacturing method of the same

A method of forming semiconductor devices includes providing a substrate with a patterned material layer formed thereon, forming a material layer on the patterned material layer, wherein the material layer has a first region with a lower top surface and a second region with a higher top surface, forming a flowable material layer on the material layer, wherein the flowable material layer exposes at least a portion of the second region of the material layer, removing the exposed portion of the second region of the material layer with the flowable material layer as a stop layer, removing the flowable material layer, and planarizing the material layer.

Methods of forming semiconductor devices with flowable material for better planarization method

A reversible ratchet wrench includes a direction-selecting rotary knob disposed rotatably on a driving head and rotatable relative to the driving head between a clockwise position and a counterclockwise position such that, at the clockwise position, a pawl unit is connected between the driving head and a ratchet head so as to allow for clockwise co-rotation of the driving head and the ratchet head, while preventing counterclockwise co-rotation of the driving head and the ratchet head, and at the counterclockwise position, the pawl unit is connected between the driving head and the ratchet head so as to allow for counterclockwise co-rotation of the driving head and the ratchet head, while preventing clockwise co-rotation of the driving head and the ratchet head.

Growing community of inventors

Taichung, Taiwan

Kun-Che Wu