Taiwan Semiconductor Manufacturing Comp. Ltd.

Kun-Che Ho

Yen-Yu Chen

Chia-Hsi Wang

A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.

Physical vapor deposition apparatus and method thereof

A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.

A PVD method includes tilting a first magnetic element over a back side of a target. The first magnetic element is moved about an axis that extends through the target. Then, charged ions are attracted to bombard the target, such that particles are ejected from the target and are deposited over a surface of a wafer. By tilting the magnetic element relative to the target, the distribution of the magnetic fields can be more random and uniform.

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Taipei, Taiwan

Kun-Che Ho