Lg Display Co., Ltd.

KumMi Oh

Hyeseon Eom

Shunyoung Yang

Jeoungin Lee

JaeHoon Park

SunWook Ko

ShunYoung Yang

Insang Jung

Minseong Yun

Jeounging Lee

A display panel can include a first plate; a second plate disposed on the first plate; a first layer stack disposed between the first plate and the second plate; a first transistor disposed within the first layer stack; a second layer stack disposed on the second plate; and a second transistor disposed within the second layer stack, in which the first transistor is disposed in a location overlapping with an active area corresponding to an image display area.

Display panel and display device

A thin-film transistor and a display panel are provided in which current characteristics of the thin-film transistor are improved by a dual gate electrode structure, and the output characteristics of the thin-film transistor are improved by dividing the top gate electrode (or bottom gate electrode) of the dual gate electrode into two electrodes and applying a back bias voltage to the top gate electrode adjacent to a source region. A high-resolution display panel or a transparent display panel is realized by increasing the aperture ratio (or transmittance) of the display panel using the highly integrated high-current device.

Thin-film transistor and display panel

A display device can include a display panel including a plurality of gate lines, a plurality of data lines and a plurality of subpixels; at least one display driving transistor disposed in each of the plurality of subpixels; a sensing transistor disposed in each of the plurality of subpixels; a driver circuit configured to control the sensing transistor; and a sensing circuit electrically connected to a first electrode of the sensing transistor, in which a gate electrode of the at least one display driving transistor and a gate electrode of the sensing transistor are disposed on opposite sides of an active layer in a top-down direction.

Sensing driving circuit having improved performance and sensing, display panel, and display device

Provided are a thin film transistor (TFT) substrate and a method of manufacturing the same. A TFT substrate includes: a substrate defining a pixel area, a first TFT including: an oxide semiconductor layer, a first gate electrode on the oxide semiconductor layer, a first source electrode, and a first drain electrode, a second TFT including: a second gate electrode, a polycrystalline semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a first gate insulating layer under the first gate electrode and the second gate electrode, the first gate insulating layer covering the oxide semiconductor layer, a second gate insulating layer under the polycrystalline semiconductor layer, the second gate insulating layer covering the first gate electrode and the second gate electrode, and an intermediate insulating layer on the first gate electrode and the polycrystalline semiconductor layer, the intermediate insulating layer including a nitride layer.

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Seoul, South Korea

KumMi Oh