Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Matsushita Electrical Industrial Co., Ltd.

Kumio Nago

Koichi Osano

Masaru Odagiri

Hiroshi Sakakima

Shunsaku Muraoka

Kenji Hasegawa

Satoru Mitani

Masayuki Ono

Toshiyuki Aoyama

Mitsuhiko Yoshikawa

Hitoshi Yamanishi

Kenya Hori

Masaru Kadono

Tatsushi Yamamoto

Isamu Aokura

Youichi Ohnishi

Shuuhei Tsuchimoto

Mitsuo Satomi

Kunio Tanaka

Toshiyuki Suemitsu

Keita Ihara

Tetsurou Muramatsu

Tersuro Muramatsu

Masatoshi Tomita

A phosphor element () includes an electron hole injection electrode () and an electron injection electrode () disposed opposite to each other, an electron hole transport layer (), a phosphor layer (), and an electron transport layer () stacked in this order from the side of the electron hole injection electrode toward the side of the electron injection electrode. The stacked layers are sandwiched between the electron hole injection electrode and the electron injection electrode, and. The phosphor layer is formed of an inorganic phosphor material () in which at least one part of the surface is covered with an organic material ().

Light emitting element and display device having an inorganic phosphor layer

Disclosed herein is a light-emitting device comprising a transparent or semi-transparent first substrate, a second substrate provided opposite to the first substrate, a transparent or semi-transparent first electrode provided on the first substrate, a second electrode provided on the second substrate so as to be opposite to the first electrode, and a light-emitting layer which contains a metal oxide semiconductor porous body, by the surface of which an organic light-emitting material is supported, and is provided between the first electrode and the second electrode.

Light-emitting device having a metal oxide semiconductor porous body with an organic light-emitting material

A memory device including a plurality of electric elements corresponding to a plurality of transistors on a one-to-one basis; a word line driver for driving a plurality of word lines; and a bit line/plate line driver for driving a plurality of bit lines and a plurality of plate lines. Each of the plurality of electric elements includes a first electrode connected to one of the transistors corresponding to the electric element, a second electrode connected to one of the plate lines corresponding to the electric element, and a variable-resistance film connected between the first electrode and the second electrode, and the variable-resistance film includes FeOas a constituent element and has a crystal grain size of 5 nm to 150 nm.

Electric element, memory device, and semiconductor integrated circuit

An electric element includes a first electrode (), a second electrode (), and a variable-resistance film () connected between the first electrode () and the second electrode (). The variable-resistance film () contains Fe (iron) and O (oxygen) as constituent elements. The content of oxygen in the variable-resistance film () is modulated along the film thickness direction.

An electric element includes a first terminal (), a second terminal (), and a variable-resistance film (). The variable-resistance film () is connected between the first terminal () and the second terminal (). The variable-resistance film () includes FeOcrystal phase and FeOcrystal phase.

A phosphor element () of the present invention includes a pair of electrodes () facing each other, and a phosphor layer () interposed between the pair of electrodes and including a semi-conductive phosphor fine particle () in which at least a part of the surface is covered with a conductive organic material (). The conductive organic material is preferably chemically adsorbed on the surface of the semi-conductive phosphor fine article. Further, it is preferable that electron transport layers () be further provided between the phosphor layer and at least one of the electrodes.

Light emitting element with semiconductive phosphor

A soft magnetic film and a soft magnetic multilayer film of high saturation magnetization having an excellent soft magnetic property and a magnetic device use the same by providing an Fe&mdash;N thin film formed on a substrate with a configuration such that the main phases are &agr;-Fe and &ggr;&prime;-Fe N, the crystal grain sizes of the &agr;-Fe phase and the &ggr;&prime;-Fe N phase are reduced to as fine as not more than 10 nm, the spacings of the lattice plane (110) of &agr;-Fe parallel to the film surface and the lattice plane (200) of &ggr;&prime;-Fe N are expanded compared to those in the condition where there is no lattice strain, and the spacing of the lattice plane (111) of &ggr;&prime;-Fe N is contracted compared to that in the condition where there is no lattice strain.

Soft magnetic film soft magnetic multilayer film method of manufacturing the same and magnetic device

In a laminated magnetic head core, Fe--M--N system soft magnetic thin films (M being at least one element selected from the group consisting of Ta, Nb, Zr, and Hf) and non-magnetic insulating films are alternately laminated. Each of the soft magnetic thin films is 0.2-10 .mu.m thick. Each of the non-magnetic insulating films is 10 through 1000 nm thick. One of the soft magnetic thin films shows high magnetic permeability in a different direction from that of an adjacent soft magnetic thin film via the non-magnetic insulating film within a film surface of the soft magnetic thin film.

Laminated magnetic head core

This soft magnetic multilayer film is magnetic isotropic and is provided with a high saturation magnetic flux density and an anisotropy of high magnetic permeability, so that it is suitable for the various magnetic head at a high production yield. The soft magnetic multilayer film is comprised of at least one film unit, which comprises a plurality of soft magnetic layers made of Fe--M--N component alloy or Fe--M--B--N component alloy are laminated through a non-magnetic insulating layer on a bias-applied substrate by means of a sputtering and are provided with a high magnetic permeability which direction is different from both neighboring soft magnetic layers through the magnetic insulating layer.

Soft magnetic multilayer films for magnetic head

The present invention relates to a method for forming a layer of isotropic soft magnetic nitride alloy even by means of mass-production apparatus wherein a target size is large in comparison to a distance between a substrate and a target, by using a bias sputtering method wherein a negative bias voltage is continuously applied to a substrate and sputtering is carried out in Ar atmosphere mixed with nitrogen gas or periodically mixed with nitrogen gas. Furthermore, the present invention may include a heat treatment of the soft magnetic nitride alloy layer deposited on the substrate in a temperature of more than 300.degree..degree.C. to less than 800.degree. C. to improve a soft magnetic characteristic.

Method for forming a soft magnetic nitride layer on a magnetic head

The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.

Method for making soft magnetic film

Disclosed is a magnetic head core material having very high corrosion resistance even under severe conditions and a method for preparing the same. The material consists of 3 to 6 wt % of aluminum, 7 to 12 wt % of silicon, not more than 3 wt % of chromium and the substantial balance being iron.

Magnetic head core

A production method for producing a high permeability alloy film which includes evaporating an alloy material composed of 1-6 wt % Al, 20-35 wt % Si, and the remainder of iron by irradiating the alloy with an electron beam, and then depositing the vapor from the alloy material onto a substrate for a predetermined time to produce an alloy film composition having a high permeability. The vapor deposition onto the substrate is preferably intercepted with the shutter until the concentration of aluminum of the vapor to be deposited has been decreased to a value between 20 and about 4 wt %.

Production method of a high magnetic permeability alloy film

A method for producing a high magnetic permeability alloy film, wherein an alloy material composed of 1-6 wt % Al, 20-35 wt % Si and the remainder of iron is irradiated with an electron beam in a vacuum deposition apparatus equipped with an electron gun, and the vapor of the alloy material is deposited on a substrate for a predetermined time to form a high magnetic permeability alloy film, comprising further a step of preventing the irregular deposition caused if the concentration of aluminum in the vapor to be deposited increases.

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Nara, Japan

Kumio Nago