Tdk Corporation

Hokkaido University

Kumiko Yamazaki

Yuki Nagamine

Junichi Yamazaki

Takeshi Shibahara

Yuji Umeda

Hiroshi Chihara

Yoshitomo Tanaka

Isao Nakahata

Wakiko Sato

Shinichi Kikkawa

Yuji Masubuchi

A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula ABON, (o+n)/a<3.00 is satisfied.

Dielectric thin film, capacitor element, and electronic circuit board

A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700&#xb0; C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABON-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

Thin film capacitor and electronic circuit board

A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula ABONwherein &#x3b1; is larger than zero and 0.300 or less, x+&#x3b1; is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element

A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula ABON(a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.

Polycrystalline dielectric thin film and capacitor element

To provide a dielectric porcelain composition and an electronic component that demonstrate ferroelectricity. A dielectric porcelain composition that is characterized by having a perovskite-type oxynitride as a principal component and by including a polycrystalline body that demonstrates ferroelectricity.

Dielectric porcelain composition and electronic component

A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan &#x3b4;. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b&#x3e;1 and n&#x2265;0.7.

A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)M(2))(M(3)M(4))(ON). 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, and 0&#x3c;z&#x3c;&#x2153; are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of the oxynitride includes an octahedron structure including a center atom, two 4site atoms, and four 8site atoms. The center atom is M(3) or M(4). The 4site atom is O atom or N atom. The 8site atom is O atom or N atom. An angle &#x3b8; formed between a straight line connecting two 4site atoms and a c-axis direction of the crystal structure in the octahedron structure satisfies 0.5&#xb0;&#x2264;&#x3b8;&#x2264;12&#xb0;.

Polycrystalline dielectric thin film and capacitance element

A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of ABON(a+b+o+n=5), wherein 'A' is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, 'B' is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.

Oxynitride thin film and capacitance element

The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of ABON(a+b+o+n=5), wherein said 'A' is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said 'B' is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

A dielectric thin film with high relative permittivity and high insulation can establish the amount of nitrogen in a metal oxynitride to be low. A dielectric thin film, wherein the dielectric composition is a metal oxynitride solid solution including Ma and Mb: a composition represented by the chemical formula MazMbOxNy (Ma is one element selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, Mb is one element selected from Ta, Nb, Ti and W, O is oxygen, and N is nitrogen); when a is the ionic valence exhibited when Ma occupies an A site in the perovskite structure and b is the ionic valence exhibited when Mb occupies a B site in the perovskite structure, a and b are 6.7&#x2264;a+b&#x2264;7.3, and x, y and z are 0.8&#x2264;z&#x2264;1.2, 2.450&#x2264;x&#x2264;3.493, and 0.005&#x2264;y&#x2264;0.700.

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Tokyo, Japan

Kumiko Yamazaki