Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Kao Corporation

Kumiko Shimizu

Hajime Kawano

Shahedul Hoque

Hiroyuki Takahashi

Hideyuki Kazumi

Toshiyuki Yokosuka

Chahn Lee

Hideki Itai

Masashi Fujita

Satoru Yamaguchi

Seiichiro Kanno

Kei Sakai

Wataru Mori

Naoya Ishigaki

Toshio Uesaka

Yasunori Takasugi

Shinobu Mori

Makoto Nishihara

Ichiro Sugai

Masaru Hosokawa

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Charged particle beam device

The objective of the present invention is to provide a charged particle beam device for setting, from an image of a trench-like groove or a pit, device conditions for finding a hole or the like provided in the trench or the pit, or measuring a hole or the like provided inside the trench or the like with high accuracy. In the present invention, a charged particle beam device comprises: a deflector for causing a charged particle beam emitted from a charged particle source to perform a scan; a detector for detecting a charged particle obtained on the basis of the scanning of the charged particle beam; and a computation processing device for generating an image on the basis of the output of the detector. In the charged particle beam device, the computation processing device specifies, from within the generated image, a relatively dark region with respect to other parts thereof, and controls the deflector in such a manner that the charged particle beam selectively scans a sample position corresponding to the dark region.

Charged particle beam device for imaging vias inside trenches

A charged particle beam device is provided which minimizes the beam irradiation amount while maintaining a high measurement success rate. The charged particle beam device includes a control device for controlling a scan deflector on the basis of selection of a predetermined number n of frames, wherein the control device controls the scan deflector so that a charged particle beam is selectively scanned on a portion on a sample corresponding to a pixel satisfying a predetermined condition or a region including the portion on the sample from an image obtained by scanning the charged particle beam for a number m of frames (m&#x2265;1), the number m of frames being smaller than the number n of frames.

Charged particle beam device having inspection scan direction based on scan with smaller dose

The image processing device has: a scanning direction decision unit which divides an captured image into a plurality of scanning regions and deciding a scanning direction of each scanning region based on a pattern edge captured in each scanning region in the captured image, a scanning order decision unit which performs a raster scan per pixel constituting each scanning region such that the scanning direction of each of the decided scanning region is directed to a horizontal direction of the raster scan, and a scanning image acquisition unit which acquires a scanning image by capturing each scanning region by the scanning-electron-microscope based on the decided scanning order.

Scanning-electron-microscope image processing device and scanning method

The scanning charged particle beam microscope according to the present invention is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

The present invention provides a high-throughput scanning electron microscope in which a wafer () is held by an electrostatic chuck (), an image is obtained using an electron beam, and the wafer surface is measured, wherein even in a case where the temperature of the wafer () is changed due to the environmental temperature the electron scanning microscope is capable of preventing any loss in resolution or the deterioration of the measurement reproducibility caused by thermal shrinkage accompanied by temperature change of the wafer (). A drill hole is provided on the rear surface of the electrostatic chuck (), and a thermometer () is secured in place so that the front end is brought into elastic contact with the bottom surface of the drill hole. The output of the thermometer () is sent to a computing unit, the computing unit computes a measurement limit time for beginning measurement, based on a predetermined algorithm, from an output value of the thermometer (), and measuring begins at individual measurement sites after the measurement limit time has elapsed.

Charged particle radiation apparatus

Provided is a composition for percutaneous administration containing a mixture of polymers forming a surface-segregated film, and (B) an active ingredient. The composition provides excellent percutaneous absorption efficacy of the active ingredient, particularly, a water-soluble active ingredient, has excellent feeling and is convenient to use.

Percutaneous administration preparations

Growing community of inventors

Tokyo, Japan

Kumiko Shimizu