Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Lg Display Lcd Co., Ltd.

Kum-Mi Oh

Jin-Wuk Kim

Sung-Hee Kim

Shun-Young Yang

Hye-Seon Eom

Min-Seong Yun

Han-Seok Lee

Kwang-Sik Hwang

Myoung-Su Yang

Jeoung-In Lee

Seok-Woo Lee

Kyoung-Jin Nam

Yong-Su An

In-Hyuk Song

Dong-Cheon Shin

Young-Ki Jung

Won-Keun Park

Sun-Wook Ko

Kyung-Mo Son

Sung-Hoon Kim

Jung-Il Lee

Won-Sang Ryu

In-Sang Jung

Yong-Won Zeon

Deuk-Ho Yeon

The present disclosure discloses an array substrate and a display device including thereof. The array substrate includes a substrate, a shield metal over the substrate and a thin film transistor including an active layer with a channel region over the shield metal and a thermal gradient portion in at least one of the shield metal, the active layer and the array substrate so as to lower a temperature of a first area of the channel region than a temperature of a second area of the channel region. A cooling zone between the channel region and the shield metal is defined by the thermal gradient portion. The array substrate and a display device including the array substrate including the thermal gradient portion that defines the cooling zone between the thin film transistor and the shield metal can improves Kink effect, maintain high driving voltage, increase on current and/or improve switching properties.

Array substrate and display device including thereof

A display device includes a first substrate; a second substrate facing the first substrate; a plurality of first electrodes and a plurality of second electrodes disposed between the first substrate and the second substrate; a third electrode on an outer side of the first substrate or the second substrate, the third electrode including an organic material and a carbon nano-tube; a plurality of first conductive lines extending along a first direction; a plurality of second conductive lines extending along the first direction; a plurality of third conductive lines extending along a second direction; and a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. A sheet resistance of the third electrode may be greater than a sheet resistance of each of the plurality of first electrodes and a sheet resistance of each of the plurality of second electrodes.

Touch sensing type display device

A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.

TFT substrate and light emitting display device including the same

A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

Disclosed are a backplane substrate that is capable of expressing high gradation even through a small pixel, a method of manufacturing the same, and an organic light-emitting display device using the same. Integration for ultra-high resolution is possible through structural modification.

Backplane substrate, method of manufacturing the same, and organic light-emitting display device using the same

Touch sensing type display device and method of fabricating the same

Disclosed are a backplane substrate, which is devised to attain circuit characteristics for realizing sufficient gradation even in smaller pixels of a super-high-resolution structure, a manufacturing method for the same, and an organic light-emitting display device using the same, inn the backplane substrate, a driving thin-film transistor has a stack structure different from that of other thin-film transistors so that only the S-factor of the driving thin-film transistor is increased.

Backplane substrate, manufacturing method for the same, and organic light-emitting display device using the same

A thin film transistor includes a gate electrode on a substrate. The gate electrode includes a flat portion and an inclined portion at a side of the flat portion. A ratio of a height to a width (height/width) of the inclined portion is 1.192 or less. The thin film transistor also includes a gate insulating layer disposed on the substrate to cover the gate electrode and a polysilicon active layer on the gate insulating layer and over the gate electrode. The thin film transistor further includes a source electrode and a drain electrode respectively connected to two opposite end portions of the polysilicon active layer.

Thin film transistor and backplane substrate of a display device including the same

Touch sensing type liquid crystal display device and method of fabricating the same

Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

Organic light emitting display device and method for manufacturing the same

A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.

Driving thin-film transistor and organic light-emitting display device using the same

Growing community of inventors

Seoul, South Korea

Kum-Mi Oh