The State University of New York

United States of America as Represented by the Administrator of Nasa

Ohio Aerospace Institute

Kulbinder Kumar Banger

John T Welch

Rolf Claessen

Paul J Toscano

Andrei Kornilov

Silvana C Ngo

Alain E Kaloyeros

Stephanie Castro

Aloysius F Hepp

Jerry D Harris

Michael Hyun-Chul Jin

Seiichiro Higashiya

A single source precursor for depositing ternary I-III-VIchalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VIstoichiometry 'built into' a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VIternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500&#xb0; C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same

Organosilver complexes with &bgr;-diketonates and neutral coordinating ligands are useful as silver precursors in chemical vapor deposition processes. The &bgr;-diketonates include 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate (hfac), acetylacetonate (acac), 2,2,6,6-tetramethyl-3,5-heptanedionate (tmhd), 1,1,1-trifluoro-2,4-pentanedionate, (tfac), 2,2,7-trimethyl-3,5-octanedionate (tmod), 1,1,1-trifluoro-5,5-dimethyl-2,4-pentanedionate (tfh) 1,1,1,2,2,3,3,7,7,8,8,9,9,9-tetradecafluoro-4,6-nonanedionate (tdf). Neutral coordinating ligands include triphenylphosphine, tributylphosphine, pyridine, tetramethylethanediamine (TMEDA) and tetramethylpropanediamine (TMPDA).

Silver precursors for CVD processes

Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.

MOCVD precursors based on organometalloid ligands

Volatile metal complexes with &agr;-sila-&bgr;-diketonate ligands containing haloalkyl, and particularly, perfluoroalkyl, substitutents are useful as metal precursors for chemical vapor deposition processes and as nanostructured materials containing fluorous domains.

MOCVD processes using precursors based on organometalloid ligands

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Lakewood, OH, United States of America

Kulbinder Kumar Banger