Samsung Electronics Co., Ltd.

Kul Inn

Doug Yong Sung

Se Jin Oh

Yun Kwang Jeon

Sung Ho Jang

Ki Ho Hwang

Protopopov Vladimir

Sungho Jang

Yoonjae Kim

Hyuck Shin

Donghyub Lee

Chan Bin Mo

Seung Bin Ahn

Jae Ik Kim

Yu Sin Kim

Tae Kyun Kang

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

Method of exposure using extreme ultraviolet and method of manufacturing a semiconductor device using the same

An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

Apparatus for monitoring process chamber

A semiconductor substrate measuring apparatus includes a light source unit generating irradiation light including light in a first wavelength band and light in a second wavelength band. An optical unit irradiates the irradiation light on a measurement object and condenses reflected light. A light splitting unit splits the reflected light, condensed in the optical unit, into a first optical path and a second optical path. A first detecting unit is disposed on the first optical path and detects first interference light in the first wavelength band in the reflected light. A second detecting unit is disposed on the second optical path and detects second interference light in the second wavelength band in the reflected light. A controlling unit calculates at least one of a surface shape or a thickness of the measurement object. The controlling unit calculates a temperature of the measurement object.

Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same

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Seongnam-si, South Korea

Kul Inn