Samsung Electro-mechanics Co., Ltd.

Kuk Hyun Sunwoo

Jae Hyuk Jang

Hyoung Jun Kim

Tae Hyun Kim

Jae Y Ma

Jae Wook Jang

A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.

Film bulk acoustic resonator and method of forming the same

FBAR device includes a membrane supporting layer between a substrate and a membrane layer, surrounding an air gap region. The membrane supporting layer support the membrane layer to obtain a robust structure. The substrate has a first area and a second area surrounding the first area. The membrane supporting layer is formed on the second area of the substrate so as to form the air gap on the first area of the substrate. The membrane layer is formed on the membrane supporting layer and the air gap. A first electrode is formed on a portion of the membrane layer. A piezoelectric layer is formed on a portion of the first electrode. A second electrode is formed on a portion of the piezoelectric layer.

Film bulk acoustic resonator

The present invention provides a robust FBAR device and a simplified method of fabricating a FBAR device. FBAR device according to the present invention includes a membrane supporting layer between a substrate and a membrane layer, surrounding an air gap region. The membrane supporting layer supports the membrane layer to obtain a robust structure. Firstly, the method forms a sacrificial layer on the substrate, then a photoresist pattern is formed on air gap forming region at a top surface of the sacrificial layer, the method removes the sacrificial layer to form a sacrificial pattern by using the photoresist pattern as an etching mask. An insulating material then deposits on the substrate, the photoresist pattern is remove, and a membrane layer is formed on a top surface of the sacrificial layer and the insulating material layer. Finally, the method removes the sacrificial pattern to form an air gap.

Film bulk acoustic resonator and method for fabrication thereof

A method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation which involves melting of a starting material in a crucible and lowering of the temperature of crucible to make the resultant melt maintain form three phase regions of an upper liquid pool region, an intermediate semi-rigid region and a lower solid region. A pair of heaters are disposed at the upper and side wall portions of crucible and controlled differently from each other so that the formed lower solid region extends at its peripheral portion throughout the inner surface of the side wall portion of the crucible, thereby minimizing the contact of the formed upper liquid pool region with the whole inner surface of the crucible. For monitoring respective temperatures of various portions in the crucible to control the heaters, there are provided thermocouples which includes a thermocouple for the crystal drawing port member, a thermocouple for the upper portion of crucible, a thermocouple for the upper portion of the side wall of crucible and a thermocouple for the lower portion of crucible.

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Kyungki-do, South Korea

Kuk Hyun Sunwoo