Samsung Electronics Co., Ltd.

Kuk-Han Yoon

Jong-Kyu Kim

Sang-sup Jeong

Sung-Gil Choi

Yong-Woo Lee

Bum-Soo Kim

Yong-Hwan Kim

Yong-Joon Choi

Heung-sik Park

Seong-Mo Koo

Ki-Youl Kim

Pyung-Ho Kim

Disclosed are semiconductor devices and methods of manufacturing the same. A support layer and a mold layer are partially etched off from the substrate, to form a mold pattern and a support pattern on the substrate such that a contact hole is formed through the support pattern and the mold pattern and an interconnector is exposed therethrough. A lower electrode layer is formed on the mask pattern to fill the contact hole, and a lower electrode is formed in the contact hole by partially removing the lower electrode layer and the mask pattern. The lower electrode is contact with the interconnector and is supported by the support pattern having the same thickness as the support layer.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a lower electrode, a supporting member enclosing at least an upper portion of the lower electrode, a dielectric layer on the lower electrode and the supporting member, and an upper electrode disposed on the dielectric layer. The supporting member may have a first portion that extends over an upper part of the sidewall of the lower electrode, and a second portion covering the upper surface of the lower electrode. The first portion of the supporting member protrudes above the lower electrode.

Semiconductor devices

In a method of forming a contact structure, first and second conductive structures may be formed on a lower structure to be spaced from each other. An insulating layer may be formed on the lower structure to cover the first and second conductive structures. A first hole exposing the first conductive structure may be formed through the insulating layer. A spacer may be formed on a sidewall of the first hole. A first contact electrically coupled to the first conductive structure may be formed in the first hole having the sidewall on which the spacer is formed. A portion of the insulating layer located between the spacers may be removed to form a second hole exposing the second conductive structure. A second contact electrically coupled to the second conductive structure may be formed in the second hole.

Contact structure and method of forming the same

A method of manufacturing a semiconductor device may involve providing a first insulation pattern on a substrate including first and second regions. The first insulation pattern may include a first contact hole for exposing the first region. A spacer may be provided on a sidewall of the first insulation pattern. A conductive pattern may be provided in the first contact hole such that a top surface of the conductive pattern is lower than a top surface of the first insulation pattern. A second insulation pattern may be provided on the conductive pattern. The first insulation pattern may be etched using the second insulation pattern and the spacer as a self-aligning mask to form a second contact hole for exposing the second region. A wiring may be provided in the second contact hole.

Method of manufacturing a semiconductor device

Growing community of inventors

Yongin-si, South Korea

Kuk-Han Yoon