Samsung Electronics Co., Ltd.

Kuihyun Yoon

Young Su Heo

Namkyun Kim

Wonguk Seo

Kwonsang Seo

Dongseok Han

Seunghan Baek

Tae-Hyun Kim

Jungmin Ko

Seungbo Shim

Sungho Jang

Sang Ki Nam

Jaehak Lee

Sangki Nam

Jongkeun Lee

Jaeyoung Park

Donghyeon Na

Minyoung Hur

Byeongsang Kim

Jewoo Han

Kangmin Jeon

Nam Kyun Kim

Kyohyeok Kim

Yunhwan Kim

Naohiko Okunishi

Kyoungchon Kim

Kyunlae Kim

Kyoungho Yang

Jungmo Yang

Yoonbum Nam

Seungbin Ahn

Changheon Lee

A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.

Plasma confinement ring, semiconductor manufacturing apparatus including the same, and method of manufacturing a semiconductor device using the same

An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

Method of measuring parameters of plasma, apparatus for measuring parameters of plasma, plasma processing system, and method of processing wafer

Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.

Substrate processing apparatus and method of manufacturing semiconductor device using the same

An etching apparatus includes a reaction chamber having an internal space; an upper electrode in the reaction chamber; a fixing chuck in the internal space of the reaction chamber and below the upper electrode; an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; a focus ring surrounding the electrostatic chuck; and a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring. The plurality of sealing members may be formed of a porous material. Each of the plurality of sealing members may include a body portion and an outer surface surrounding the body portion. Only the body portion may include voids and the outer surface may be smooth and free of voids.

Etching apparatus

A substrate inspection system includes a floating unit that floats a substrate, an inspection unit disposed above the floating unit, a grip unit disposed below the inspection unit and including a first grip member that holds the substrate on the floating unit, a grip transfer unit that moves the grip unit in a first direction, and an illumination unit that generates light. The inspection unit inspects the substrate that floats on the floating unit, the illumination unit is disposed on a moving path of the grip unit, and the light generated by the illumination unit is irradiated onto the inspection unit. The first grip member includes a first adsorption pad that adsorbs the substrate, and a first support member that supports the first adsorption pad and that includes a first opening into which the illumination unit is inserted.

Grip apparatus and substrate inspection system including the same, and method of manufacturing semiconductor device using the substrate inspection system

Provided is an optical inspection system including a supporting unit, allowing a target object to be loaded thereon, a light source unit configured to emit a laser beam toward the target object, a light condensing unit collecting scattered light that is scattered at the target object when the laser beam is irradiated onto the target object, and a control unit controlling the light source unit and the light condensing unit and analyzing the scattered light to examine whether there are pollutants on the target object. The supporting unit may include a first supporting unit, on which the target object is disposed, and which is formed of a first material, and a second supporting unit, which is disposed under the first supporting unit and is formed of a second material different from the first material.

Optical inspection system

Growing community of inventors

Yongin-si, South Korea

Kuihyun Yoon