Advanced Micro-fabrication Equipment Inc. China

Kui Zhao

Hiroshi Iizuka

Tuqiang Q Ni

Dee Wu

Tuqiang Ni

Rason Zuo

Shenjian Liu

Xiaobei Pang

Disclosed are a temperature control apparatus for semiconductor processing equipment and a corresponding temperature control method, wherein each heating element in each row or each column in a heating element matrix forms a power return circuit with a same power source, respectively, and a same switch module is provided for the power return circuits of all heating elements in each column or each row of the heating element matrix; the input powers to the heating elements in an entire row or column controlled by each power output port of the power source are adjusted by adjusting the output power magnitude of the corresponding power source, and conduction/disconnection of the power return circuits of an entire column or row controlled by each switch module is controlled by controlling ON/OFF of each switch module. The present disclosure reduces circuit complexity and saves costs; the present disclosure reduces temperature control complexity while guaranteeing temperature control accuracy, thereby achieving a uniform and flexible temperature control result.

Temperature control apparatus for semiconductor processing equipment, and temperature control method for the same

A plasma reactor having tunable low frequency RF power coupling to annular electrode. The reaction chamber has electrically conductive base connected to a low frequency RF source via RF match. An electrostatic chuck is attached to the electrically conductive base. An outer sidewall of the electrically conductive base is coated with plasma corrosion-resistance dielectric layer. A coupling ring is made of a dielectric material and surrounds an outer perimeter of the base. A focus ring is disposed above the coupling ring, the focus ring being arranged to surround the electrostatic chuck and be exposed to the plasma. The plasma reactor further comprises an annular electrode that is disposed above the coupling ring but below the focus ring, a wire having a first end electrically connected to the base, and a second end connected to the annular electrode. A variable capacitance is serially connected to the wire.

Plasma reactor having a variable coupling of low frequency RF power to an annular electrode

The present disclosure provides a plasma reactor having a function of tuning low frequency RF power distribution, comprising: a reaction chamber in which an electrically conductive base is provided, the electrically conductive base being connected to a low frequency RF source via a first match, an electrostatic chuck being provided on the electrically conductive base, an upper surface of the electrostatic chuck being configured for fixing a to-be-processed substrate, an outer sidewall of the electrically conductive base being coated with at least one layer of plasma corrosion-resistance dielectric layer, a coupling ring made of a dielectric material surrounding an outer perimeter of the base, a focus ring being disposed above the coupling ring, the focus ring being arranged surround the electrostatic chuck and be exposed to a plasma during a plasma processing procedure; the plasma reactor further comprising an annular electrode that is disposed above the coupling ring but below the focus ring; a wire, a first end of which is electrically connected to the base, and a second end of which is connected to the annular electrode, a variable capacitance being serially connected to the wire.

Plasma reactor having a function of tuning low frequency RF power distribution

Disclosed are a plasma reactor and a heating apparatus therefor, wherein the heating apparatus comprises: a programmable power supply, a heater assembly, and a bandpass filter assembly, the heater assembly being configured for connecting with the programmable power supply via the bandpass filter assembly, the bandpass filter assembly including a plurality of bandpass filters, wherein the programmable power supply may input, based on match relationships between outputted AC heating powers and conduction frequencies of the bandpass filters BPF, an AC heating power to a matched heater unit to perform heating, thereby achieving zoned temperature control; the disclosures offer a simple circuit structure due to eliminating the need of switch elements, thereby offering a simple control manner.

Plasma reactor and heating apparatus therefor

A switchable matching network and an inductively coupled plasma processing apparatus having such network are disclosed. The switchable matching network enables selection between two bias power frequencies. The network is particularly suitable for an inductively-coupled plasma processing apparatus. The switchable matching network comprises: a first match circuit having a first input port connected to a first signal source and a first output port coupled to a load; a second match circuit having a second input port connected to a second signal source and a second output port coupled to the load; a switching device having a first connection port, a second connection port and a third connection port, the first connection port connected to the first input port and the second connection port connected to the second output port; a variable capacitor connected between ground and the third connection port of the switching device.

Growing community of inventors

Shanghai, China

Kui Zhao