United Microelectronics Corp.

Kuen-Yow Lin

Kuo-Chi Lin

Kun-Chi Lin

Horng-Nan Chern

Chien-hua Tsai

A method for forming a multi-layered liner on the sidewalls of a node contact opening includes the steps of providing a substrate having a dielectric layer thereon. The dielectric layer further includes a node contact opening that exposes a portion of the substrate. A first liner layer is then formed on the sidewalls of the node contact opening. Next, a second liner layer is formed over the first liner layer such that the first liner layer and the second liner layer together form a dual-layered liner. The first liner layer in contact with the dielectric layer has good insulation capacity while the second liner layer has good etch-resisting property.

Method for forming multi-layered liner on sidewall of node contact opening

A method for forming a capacitor of memory cell is disclosed. The method includes, firstly, there is a semiconductor substrate that owns a first dielectric layer formed thereon. The first dielectric layer has a contact opening filled with doped polysilicon to form a stud. Then, a second dielectric layer is formed on the first dielectric layer and the surface of the stud. A silicon oxynitride (SiON) layer can be formed on the second dielectric layer. A photoresist layer is formed on the silicon oxynitride layer. Portions of the silicon oxynitride layer and the second dielectric layer are etched. Blanket and conformably forming an amorphous silicon layer is carried out. A third dielectric layer is formed on the amorphous silicon layer. The third dielectric layer and a portion of the amorphous silicon layer atop of the silicon oxynitride layer are all etched back. The silicon oxynitride layer is used as an anti-etching layer. The amorphous silicon layer will be treated to form a hemispherical-grained (HSG) layer on the surface of the amorphous silicon layer. The silicon oxynitride layer is removed. Dipping the surface of the second dielectric layer is achieved to comprehensively clean the surface thereof, thereby preventing unwanted connection of the hemispherical-grained layer on the capacitor with the hemispherical-grained layer out of the capacitor.

Method for forming capacitor of memory cell

A method for forming different area vias of dynamic random access memory is disclosed. Essential points of the invention comprise spacer is only formed on gate of periphery circuit, and depth of passivation layer of periphery circuit gates is larger than depth of layer that capped over gates of cell. The provided method comprises following steps: First, capping a layer over gate of cell and gate of periphery circuit and then forming spacer on gate of periphery circuit, where depth of capping layer is smaller than depth of passivation layer of periphery circuit gate. Second, both gate of cell and gate of periphery circuit are cover by a dielectric layer. Third, vias in both cell and periphery circuit are formed simultaneously by photolithography and etching, where etching comprises etching of dielectric layer and etching of passivation layer. Advantageous of the invention is only a photolithography process is necessary and then throughput is enhanced.

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Chia-Yi, Taiwan

Kuen-Yow Lin