Raynergy Tek Incorporation

Kuen-wei Tsai

Yi-Ming Chang

Chuang-Yi Liao

Wei-Long Li

Huei Shuan Tan

Priti Tiwana

Graham Morse

Nicolas Blouin

Luca Lucera

Tim Poertner

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

Structure of the photodiode

The present invention relates to a structure of photodiode, which comprises a substrate, a first electrode, an electron transport layer, a photoactive layer, a filter layer, and a second electrode. The first electrode is disposed on the substrate. The electron transport layer is disposed on the first electrode. The photoactive layer is disposed on the electron transport layer. The photoactive layer has a first energy gap value. The filter layer is disposed on the photoactive layer and has a second energy gap value. The second electrode is disposed on the filter layer. The second energy gap value is greater than the first energy gap value. The ratio of the second energy gap value to the first energy gap value is an energy gap ratio. The energy gap ratio is greater than 1 and less than or equal to 3.

The invention relates to a photodiode, like an photovoltaic (OPV) cell or photodetector (OPD), comprising, between the photoactive layer and an electrode, a hole selective layer (HSL) for modifying the work function of the electrode and/or the photoactive layer, wherein the HSL comprises a fluoropolymer and optionally a conductive polymer, and to a composition comprising such a fluoropolymer and a conductive polymer.

Photodiode comprising fluropolymer compound

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HSINCHU, Taiwan

Kuen-wei Tsai