United Microelectronics Corp.

Kuen-Jian Chen

Water Lur

Chih-Chien Liu

Juan-Yuan Wu

Shih-Wei Sun

Ming-Sheng Yang

Horng-Bor Lu

J Y Wu

Yu-Hao Chen

A polarization method that utilizes a chemical-mechanical polishing operation. In the polishing operation, slurry for polishing a metallic layer is first employed to remove a greater portion of the metallic layer. Next, slurry for polishing a dielectric layer and having properties very similar to the metal-polishing slurry is added and mixed together with the slurry for polishing a metallic layer so that the polishing rate for the dielectric layer is increased. Consequently, metallic residues remaining on the dielectric layer are removed and a planar dielectric layer is obtained at the same time.

Method of planarization

A gas delivering apparatus useful for improving the level of uniformity of thin film deposited over a silicon wafer in a chemical vapor deposition. By reshaping the injector from a conventional straight hollow tube to a funnel-shaped profile, the opening of the injector is widened. With a wider injector opening, the gas flow rate becomes slower and hence more capable of spreading over a wider wafer surface area. Consequently, a uniform gas flow pattern is established resulting in the deposition of a uniform layer.

Gas delivering apparatus for chemical vapor deposition

A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the deposition of three oxide layers using high density plasma chemical vapor deposition (HDPCVD). A first HDPCVD step is carried out while keeping the substrate unbiased to form an oxide layer over the lines and in the gap. A second HDPCVD step in which the substrate is biased deposits a second oxide layer over the first oxide layer. During the second HDPCVD step some etching occurs and a portion of the first oxide layer is removed. A third HDPCVD step is carried out at a greater etch and sputtering rate than the second step to complete filling of the gap with dielectric material. The first oxide layer acts to protect the underlying structures from etching damage during the third step. Gaps between wiring lines can be filled with dielectric material without forming voids, even for high aspect ratio gaps.

Multi-step high density plasma chemical vapor deposition process

Growing community of inventors

Hsinchu Hsien, Taiwan

Kuen-Jian Chen