National Yang Ming Chiao Tung University

Kuen-Di Lee

Ching-Te Chuang

Nan-Chun Lien

Shyh-Jye Jou

Wei-Chiang Shih

Ming-Chien Tsai

Yi-Wei Lin

Wei Hwang

Hao-I Yang

Ming-Hsien Tu

Geng-Cing Lin

Shao-Cheng Wang

Jyun-Kai Chu

The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.

Oscillato based on a 6T SRAM for measuring the bias temperature instability

A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.

Threshold voltage measurement device

Growing community of inventors

Kinmen County, Taiwan

Kuen-Di Lee