Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Kuei-Lin Chan

Yu-Yun Peng

Keng-Chu Lin

Fu-Ting Yen

Hsu-Kai Chang

Chen-Hao Wu

Han-De Chen

Chi-Young Lee

Kenichi Sano

Huang-Lin Chao

Yi-Hsuan Chen

Yu-Wei Lu

Cheng-I Chu

Wei-Ting Yeh

Hsin-Tien Chiu

Min-Chiao Tsai

Yi-Rui Chen

Zheng-Yong Liang

Chia-Yun Cheng

Shao-Gang Cheng

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.

Metal nanoparticles in an amorphous bonding layer between a device substrate and carrier substrate

A post-deposition treatment can be applied to an atomic layer deposition (ALD)-deposited film to seal one or more seams at the surface. The seam-top treatment can physically merge the two sides of the seam, so that the surface behaves as a continuous material to allow etching at a substantially uniform rate across the surface of the film. The seam-top treatment can be used to merge seams in ALD-deposited films within semiconductor structures, such as gate-all-around field effect transistors (GAAFETs).

Seam-top seal for dielectrics

A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion.

Inner spacer for semiconductor device

Provided is a sun protection material including a plurality of polystyrene microspheres and a plurality of refractive layers. The polystyrene microspheres have a particle size of 150 nm to 300 nm. Surfaces of the polystyrene microspheres are at least partially covered by the refractive layers. The sun protection material can scatter a light in a wavelength range between 250 nm and 400 nm. A sun protection composition containing the sun protection material also may scatter a light of a wavelength range between 250 nm and 400 nm, such that the UV protection of the sun protection composition is enhanced.

Sun protection material and sun protection composition containing the same

Growing community of inventors

Hsinchu, Taiwan

Kuei-Lin Chan