Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Kuanhsiung Chen

Minghwei Hong

Yen-Hsun Lin

Keng-Yung Lin

Jueinai Kwo

Juei-Nai Kwo

Chien-Hua Fu

A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-&#x3ba; dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.

Semiconductor device having high-&#x3ba; dielectric layer and method for manufacturing the same

A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4&#xd7;6 reconstruction surface, a 2&#xd7;4 reconstruction surface, a 3&#xd7;2 reconstruction surface, a 2&#xd7;1 reconstruction surface, or a 4&#xd7;4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (YO) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.

Single-crystal rare earth oxide grown on III-V compound

Growing community of inventors

Hsin-Chu, Taiwan

Kuanhsiung Chen