Samsung Electronics Co., Ltd.

Kuang-Woo Nam

In-sang Song

Yun-kwon Park

Seok-chul Yun

Jong-seok Kim

Chul-soo Kim

Duck-hwan Kim

Sang-Wook Kwon

Il-Jong Song

Young-tack Hong

Byeoung-ju Ha

Hae-seok Park

Young-Hoon Min

Dong-ha Shim

Eun-seok Park

Si-Gyoung Koo

Seok-Mo Chang

Jea-Shik Shin

Sang-Hun Lee

Che-Heung Kim

Seog-woo Hong

Jong-Seok Kim

Hee-moon Jeong

Ji-Hun Koo

Sang-Chul Sul

Kook-hyun Sunwoo

Jea-shik Shin

In-Sang Song

Seok-mo Chang

Jin-Hun Koo

Duck-Hwan Kim

Myung-Gun Kim

Yun-Kwon Park

Seog-Woo Hong

Hae-Seok Park

Byeoung-Ju Ha

Seok-Chul Yun

A mobile terminal communicates with a base station to request channel allocation for RFID communication, receives a channel from the base station, and communicates with an RFID tag through the allocated channel.

RFID communication method and apparatus

A balance filter packaging chip having a balun mounted therein and a manufacturing method thereof are provided. The balance filter packaging chip includes a device substrate; a balance filter mounted on the device substrate; a bonding layer stacked on a certain area of the device substrate; a packaging substrate having a cavity formed over the balance filter, and combined with the device substrate by the bonding layer; a balun located on a certain area over the packaging substrate; and an insulator layer for passivating the balun. Accordingly, the present invention can reduce an element size and simplify a manufacturing process.

Balance filter packaging chip having balun mounted therein and manufacturing method thereof

A Radio Frequency (RF) transmission method of a Radio Frequency Identification (RFID) reader using a plurality of channels is provided. The method includes: selecting at least part of the plurality of channels, measuring an RF power of each of the selected channels, determining a transmission environment of the RF according to a measurement determination, and modulating an RF signal according to the determined transmission environment.

RFID reader and RF transmission method thereof

A film bulk acoustic resonator (FBAR) filter and a duplexer are disclosed. At least one series resonator is positioned between an input port for inputting a frequency signal and an output port for outputting a frequency signal, at least two shunt resonators respectively positioned between the input and output ports and a ground, a first trimming inductor connects the at least two shunt resonators and the ground, and a second trimming inductor is positioned between the at least two shunt resonators.

Film bulk acoustic resonator filter and duplexer

An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.

Integrated device and fabricating method thereof

A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.

MEMS switch and method for manufacturing the same

An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

Integrated filter including FBAR and saw resonator and fabrication method therefor

A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

Filter comprising inductor, duplexer using the filter and fabricating methods thereof

A duplexer having a filter and an isolation part which are integrally formed including a substrate, a transmitter filter integrated on the substrate to pass signals only in a frequency band for transmission, a receiver filter integrated on the substrate to pass signals only in a frequency band for reception, and an isolation part integrally formed with either one of the transmitter filter and the receiver filter to isolate the signals passed through the transmitter filter and the receiver filter from each other. Since the isolation part is integrally formed with either one of the transmitter filter and the receiver filter, the duplexer can be manufactured in a small size by simplified processes.

Duplexer fabricated with monolithic FBAR and isolation part and a method thereof

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Seoul, South Korea

Kuang-Woo Nam