National Central University

Kuang-Po Hsueh

Jinn-Kong Sheu

Yue-Ming Hsin

A planar combined structure of a bipolar junction transistor (BJT) and n-type/p-type metal semiconductor field-effect transistors (MESFETs) and a method for forming the structure. The n-type GaN MESFET is formed at the same time when an inversion region (an emitter region) of the GaN BJT is formed by an ion implantation or impurity diffusion method by using a particular mask design, while a p-type GaN region is at the same time is formed as the p-type GaN MESFET. Namely, the n-type channel of the n-type MESFET is formed by the ion implantation or impurity diffusion method when the BJT is formed with the same ion implantation or impurity diffusion method performed, while a region of the p-type GaN without being subject to the ion implantation or impurity diffusion method is formed as the p-type MESFET. As such, the BJT is formed currently with the n-type/p-type MESFETs on the same GaN crystal growth layer as a planar structure.

Method of forming a planar combined structure of a bipolar junction transistor and n-type and p-type metal semiconductor field-effect transistors and method for forming the same

A gallium nitride heterojunction bipolar transistor with a p-type strained InGaN base layer is provided. The gallium nitride heterojunction bipolar transistor includes a substrate, a highly doped collector contact layer located over the substrate, a low doped collector layer located over the collector contact layer, a p-type base layer located over the collector layer, a highly doped strained InGaN base layer located over the p-type base layer, a emitter layer located over the p-type strained InGaN base layer, a highly doped emitter contact layer located over the emitter layer, and an emitter metal electrode, a base metal electrode, and a collector metal electrode respectively located on the emitter contact layer, the p-type strained InGaN base layer, and the collector contact layer.

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Taipei, Taiwan

Kuang-Po Hsueh