Taiwan Semiconductor Manufacturing Comp. Ltd.

Visera Technologies Company Limited

Kuang-Peng Lin

Yu-Jen Chen

Chin-Chuan Hsieh

Chih-Kung Chang

Hsiu-Mei Yu

Yang-Tung Fan

Wu-Cheng Kuo

Kuo-Feng Lin

Kuo-Liang Lu

Yu-Kung Hsiao

Fu-Tien Weng

Sen-Fu Chen

Ching-Wen Cho

Szu-Hung Yang

Bii-Junq Chang

Li-Hsin Tseng

Hung-Jen Tsai

Kuo-Su Huang

Tsung-Lin Wu

Jen-Shiang Leu

Ta-Yang Lin

Weng-Liang Fang

Chai-Der Chang

Hsien-Tsong Liu

Jow-Feng Lee

Jyh-Ping Wang

Shing-Jzy Tay

Kuwi-Jen Chang

An image sensor package includes a medium layer having a first surface and a second surface opposite to the first surface. The image sensor package also includes a metal-insulator-metal structure disposed on the first surface of the medium layer. The metal-insulator-metal structure includes a first metal layer, a first insulating layer, and a second metal layer, and the first insulating layer is disposed between the first metal layer and the second metal layer. The image sensor package further includes an optical filter disposed on the second surface of the medium layer.

Image sensor packages

A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to contact with a corrosive material employed for further processing of the substrate. There is then treated, while employing a first plasma method employing a first plasma gas composition comprising an oxidizing gas, the target layer to form an oxidized target layer having an inhibited susceptibility to corrosion incident to contact with the corrosive material employed for further processing of the substrate. Finally, there is then processed further, while employing the corrosive material, the substrate. The method is useful when forming bond pads within microelectronic fabrications. When directed towards forming patterned conductor layers, such as bond pads, the method optionally employs an inert plasma treatment of a patterned conductor layer followed by an aqueous ethanolamine treatment of the patterned conductor layer prior to a first plasma treatment of the patterned conductor layer.

Method for forming corrosion inhibited conductor layer

A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.

Rework procedure for the microlens element of a CMOS image sensor

The present invention teaches how greater solder ball height can be achieved without the need to sacrifice areal density. The mold in which the solder is formed, is created in two steps. In a first exposure, a negative photoresist (preferably DFR) is patterned to form a conventional cylindrical mold. However, exposure and development time are adjusted in such a way that a layer of unexposed and undeveloped resist of reduced thickness remains covering the floor of the mold. This residual resist layer is given a second exposure and, after development, forms an annular insert in the bottom of the first mold. After the mold has been filled with solder (either through electroplating or by using solder paste) it is removed, the result being a solder bump made up of two contiguous coaxial cylinders the upper one having the larger diameter. After remelt, bumps having this shape form oblate spheroids rather than spheres.

Method to achieve robust solder bump height

A method and an apparatus for preparing a backside-ground wafer for testing are described. The method includes the steps of first providing a calibration wafer that has a pattern formed on a top surface of an insulating material such as oxide or nitride. Three droplets of water are applied with each droplet sufficiently apart from the other droplets on the top surface of the calibration wafer. A backside-ground wafer that has a ground backside and a front side to be tested is then mated to the calibration wafer by mating the ground backside to the top surface of the calibration wafer with water droplets therein-between forming a bond by capillary reaction in-between the oxide pattern on the calibration wafer. The apparatus for mounting a backside-ground wafer to a calibration wafer consists of a slanted block having a top surface with a slant angle between about 10&deg; and about 30&deg;.

Apparatus and method for preparing backside-ground wafers for testing

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Hsin-Chu, Taiwan

Kuang-Peng Lin