United Microelectronics Corp.

Kuang-Chih Wang

Water Lur

David Lee

Ming-Sheng Yang

An air gap structure and formation method for substantially reducing capacitance in a dual damascene based interconnect structure is disclosed. The air gap extends above, and may also additionally extend below, the damascene interconnects desired to be isolated thus minimizing fringing fields between the lines. Multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels.

Air gap for dual damascene applications

An air gap structure and formation method for substantially reducing the undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device is disclosed. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure and formation method can be utilized in conjunction with either damascene or conventional integrated circuit metallization schemes. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.

Air gap formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device

An air gap structure and formation method for substantially reducing the undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device is disclosed. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure and formation method can be utilized in conjunction with a tungsten plug process. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.

Air gap for tungsten/aluminum plug applications

A cluster tool and a number of different processes for making a cobalt-silicide material are disclosed. Combinations of alloyed layers of Co&#x2014;Ti&#x2014;along with layers of Co&#x2014;are arranged and heat treated so as to effectuate a silicide reaction. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor processing. A cluster tool is configured with appropriate sputter targets/heat assemblies to implement many of the needed operations for the silicide reactions, thus resulting in higher savings, productivity, etc.

Wafer processing apparatus and methods for depositing cobalt silicide

Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device

A semiconductor device that includes cobalt-silicide based contacts is disclosed, as well as a process for making the same. Combinations of alloyed layers of Co&#x2014;Ti&#x2014; along with layers of Co&#x2014; are arranged and heat treated so as to effectuate a silicide reaction on a silicon substrate. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor devices and processes.

Semiconductor device with cobalt silicide contacts and method of making the same

A cluster tool and a number of different processes for making a cobalt-silicide material are disclosed. Combinations of alloyed layers of Co&mdash;Ti&mdash; along with layers of Co&mdash; are arranged and heat treated so as to effectuate a silicide reaction. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor processing. A cluster tool is configured with appropriate sputter targets/heat assemblies to implement many of the needed operations for the silicide reactions, thus resulting in higher savings, productivity, etc.

Growing community of inventors

Taichung, Taiwan

Kuang-Chih Wang