Innolux Corporation

Kuanfeng Lee

Sheng-Feng Huang

Cheng-Min Wu

Akihiro Iwatsu

Chandra Lius

Nai-Fang Hsu

A circuit includes a first transistor, a second transistor, a third transistor and a fourth transistor. The first transistor has a first end and a second end. The second transistor has a first end and a second end, wherein the first end of the second transistor is coupled to the first end of the first transistor. The third transistor has a first end and a second end, wherein the second end of the third transistor is coupled to the second end of the second transistor. The fourth transistor has a first end coupled to the second end of the first transistor. The fourth transistor has a bottom gate and an oxide semiconductor layer, and the second transistor has a top gate and a silicon semiconductor layer.

Gate line driving circuit with top gate and bottom gate

A display device is disclosed, which includes: a substrate; a first transistor disposed on the substrate; and a second transistor disposed on the substrate. The first transistor includes: a first active layer; a first electrode and a second electrode electrically connecting to the first active layer; and a conducting layer at least partially covering one of the first electrode and the second electrode. The second transistor includes a second active layer. Herein, one of the first active layer and the second active layer includes a polysilicon layer, and the other one of the first active layer and the second active layer includes a metal oxide layer.

Display device

A driver circuit which includes an output circuit and a control circuit coupled to the output circuit. The driver circuit includes a pull-up transistor with a silicon semiconductor layer. The control circuit includes a first transistor with an oxide semiconductor layer.

Driver circuit

A display device includes: a substrate; a first gate electrode disposed on the substrate; a gate insulating layer disposed on the first gate electrode; a first active layer disposed on the gate insulating layer and including a polysilicon layer; a second gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the second gate electrode; a second active layer disposed on the first insulating layer and including a metal oxide layer; a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode, wherein the first source and drain electrodes are disposed on the first insulating layer and electrically connect to the first active layer, and the second source and drain electrodes are disposed on the second active layer and electrically connect to the second active layer; and a display medium layer disposed on the substrate.

Display device having different types of transistors

A display device includes a substrate; a gate insulating layer disposed on the substrate, a first gate electrode and a second gate electrode; a first active layer disposed on the gate insulating layer and comprising a polysilicon layer; a first insulating layer disposed on the first active layer and the gate insulating layer; a second active layer disposed on the first insulating layer and comprising a metal oxide layer; a first source electrode, a first drain electrode, a second source electrode and a second drain electrode, wherein the first source electrode and the first drain electrode are disposed on the first insulating layer and respectively electrically connect to the first active layer, and the second source electrode and the second drain electrode are disposed on the second active layer and electrically connect to the second active layer; and a display medium layer disposed on the substrate.

Display device including hybrid types of transistors

A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.

Growing community of inventors

Miao-Li County, Taiwan

Kuanfeng Lee