Macronix International Co., Ltd.

Kuan-Yuan Shen

Chia-Jung Chiu

Chung-Hao Fu

The present disclosure provides a 3D memory structure such as 3D Flash memory structure applying for 3D AND flash memory and a method of forming the same. An etching stop layer is formed on a substrate including active elements. A stacked layer is formed on the etching stop layer. The stacked layer includes insulation layers and sacrificed layers stacked alternatively on the etching stop layer. A patterning process is performed on the stacked layer to form a first stacked structure above the active elements, a second stacked structure surrounding the first stacked structure, and a trench pattern separating the first stacked structure and the second stacked structure and exposing the etching stop layer. The trench pattern includes asymmetric inner sidewalls and outer sidewalls. The inner sidewalls define sidewalls of the first stacked structure. The outer sidewalls define sidewalls of the second stacked structure that face the first stacked structure.

3D memory structure and method of forming the same

A vertical memory structure comprises a stack of alternating layers of insulator material and word line material with a vertical opening through the alternating layers. One of the layers of insulating material and layers of word line material have recessed inside surfaces facing the opening. First and second conductive pillars are disposed inside the vertical opening. A data storage structure is disposed on the inside surfaces of the layers of word line material, including on the recessed inside surfaces. A semiconductor channel layer is disposed on the data storage structures around a perimeter of the vertical opening, and having first and second source/drain terminals at contacts with the first and second conductive pillars.

Curved channel 3D memory device

Provided is a memory device, including a stacked structure, a pillar, a first stop layer, and a contact plug. The stacked structure includes a plurality of conductive layers. The pillar penetrates the plurality of series-connected memory cells. The plurality of series-connected memory cells are located in a layout pattern of pillar locations at cross-points between the pillar and the conductive layers. The first stop layer covers the stacked structure and a portion of a top surface of the pillar. The contact plug passes through the first stop layer, extending into the pillar, and is electrically connected to the plurality of series-connected memory cells. The contact is landed on the contact plug, and is electrically connected to a portion of the pillar through the contact plug.

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Hsinchu County, Taiwan

Kuan-Yuan Shen