Taiwan Semiconductor Manufacturing Comp. Ltd.

United Microelectronics Corp.

Kuan-Yu Lin

Chin-Chou Liu

Kai-Hsiang Chang

Ching-Lun Lai

Shin-Yeh Huang

Chih-Chen Jiang

Yi-Wei Peng

Ming-Shan Tsai

Chin-Her Chien

Wei-Pin Changchien

Ji-Jan Chen

Jung-Rung Jiang

Yung-Chow Peng

Yi-Wei Chen

Chin-Cheng Chien

Chung-Chieh Yang

Tien-Wei Yu

Chin-I Liao

Shin-Chi Chen

Chih-Yueh Li

Jinn-Yeh Chien

Chih-Chia Chen

Wan-Chun Chen

Bo-Jr Huang

I-Ming Lai

Chi-Wei Hu

Fong-Lung Chuang

The semiconductor device structures are provided. The semiconductor device structure includes a gate stack structure formed on a substrate and an isolation structure formed in the substrate. The semiconductor device structure further includes a source/drain stressor structure formed between the gate stack structure and the isolation structure and a metal silicide layer formed on the source/drain stressor structure. A portion of the metal silicide layer is below a top surface of the isolation structure.

Method for forming semiconductor device structure

Provided is a monolithic stacked integrated circuit (IC). The IC includes a first layer over a substrate and a second layer over the first layer. The first layer includes first circuit elements where a first portion of the first circuit elements has a defect. The second layer includes second circuit elements. The IC further includes interconnect elements coupling the first portion to a second portion of the second circuit elements for mitigating the defect.

Monolithic stacked integrated circuits with a redundant layer for repairing defects

A circuit including a first switch receiving an input reference voltage, a second switch receiving an input testing voltage, the first switch and the second switch are electrically connected in parallel. The circuit further includes a first capacitor electrically connected in series with the first switch and the second switch. The circuit further includes a feedback stage comprising a feedback inverter electrically connected in parallel with a feedback switch, where the feedback stage is electrically connected in series with the first capacitor. The circuit further includes a first inverter electrically connected in series to the feedback stage, and a third switch electrically connected in series with the first inverter. The circuit further includes a second inverter electrically connected in parallel to a third inverter, the second inverter and the third inverter are electrically connected in series to the third switch, and the third inverter outputs a first output signal.

Switched capacitor comparator circuit

Methods for forming a semiconductor device structure are provided. The method includes providing a substrate and forming an isolation structure in the substrate. The method also includes forming a gate stack structure on the substrate and etching a portion of the substrate to form a recess in the substrate, and the recess is adjacent to the gate stack structure. The method includes forming a stressor layer in the recess, and a portion of the stressor layer is grown along the (311) and (111) crystal orientations.

A methodology and circuits for integrated circuit design are provided. A first electronic design file for an integrated circuit is provided. The first electronic design file for the integrated circuit has a timing measurement circuit thereon. Based on the first electronic design file, a number of integrated circuits are manufactured. These manufactured integrated circuits have respective timing measurement circuits arranged at predetermined locations thereon. The timing measurement circuits are used to measure a number of respective timing delay values, which are subject to manufacturing variation, on the integrated circuits. The measured timing delay values are used to set how an auto-place and route tool arranges blocks in a second electronic design file, which is routed after the timing delay values are measured, to account for any measured manufacturing variation.

In situ on the fly on-chip variation measurement

An interposer element in a multidimensional integrated circuit with stacked elements has one or more conductors, especially power supply lines, coupled through decoupling networks defining low impedance shunts for high frequency signals to ground. The interposer has successive tiers including silicon, metal and dielectric deposition layers. The decoupling network for a conductor has at least one and preferably two reactive transmission lines. A transmission line has an inductor in series with the conductor and parallel capacitances at the inductor terminals. The inductors are formed by traces in spaced metal deposition layers forming coil windings and through vias connecting between layers to permit conductor crossovers. The capacitances are formed by MOScaps in the interposer layers. An embodiment has serially coupled coils with capacitances at the input, output and junction between the coils, wherein the coils are magnetically coupled to form a transformer.

Power line filter for multidimensional integrated circuits

Provided is a monolithic stacked integrated circuit (IC). The IC includes a first layer over a substrate and a second layer over the first layer. The first layer includes a first plurality of circuit elements where a first portion of the first plurality of circuit elements has defects. The second layer includes a second plurality of circuit elements. The IC further includes interconnect elements coupling the first portion to a second portion of the second plurality of circuit elements for mitigating the defects.

Repairing monolithic stacked integrated circuits with a redundant layer and lithography process

Embodiments for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stack structure. The semiconductor device structure further includes an isolation structure formed in the substrate and a source/drain stressor structure formed adjacent to the isolation structure. The source/drain stressor structure includes a capping layer which is formed along the (311) and (111) crystal orientations.

Semiconductor device structure

A method comprises selecting a region from a layout pattern of an integrated circuit, wherein the region comprises a plurality of functional units, and wherein the functional units are not coupled to each other through a variety of connection components, identifying hot spots in the region using a first threshold and inserting a plurality of decoupling capacitors adjacent to the hot spots.

Method for placing decoupling capacitors

A method for fabricating a compound semiconductor epitaxial structure includes the following steps. Firstly, a first compound epitaxial layer is formed on a substrate. Then, a continuous epitaxial deposition process is performed to form a second compound epitaxial layer on the first compound epitaxial layer, so that the second compound epitaxial layer has a linearly-decreased concentration gradient of metal. Afterwards, a semiconductor material layer is formed on the second compound epitaxial layer.

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Zhudong, Taiwan

Kuan-Yu Lin