Taiwan Semiconductor Manufacturing Comp. Ltd.

Wistron Neweb Corporation

Kuan-Wei Lin

Ming-Hsi Yeh

Kuo-Bin Huang

Ying-Liang Chuang

Yu-Chi Pan

Yu-Te Su

Hsiao-Yi Lin

A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Fin field-effect transistor and method of forming the same

FIN field-effect transistor and method of forming the same

The present disclosure provides an electronic device, and a radio-frequency device and a signal transmission component thereof. The signal transmission component is operable in an operating frequency band and applied in a radio frequency device having a signal connector and a radio frequency circuit. The signal transmission component includes a signal transmission line and an electrostatic protection unit. The signal transmission line is disposed between the signal connector and the radio frequency circuit. The electrostatic protection unit is electrically connected to the signal transmission line, and includes a connecting end and a grounding end. An impedance of the electrostatic protection unit is greater than an impedance of the signal transmission line. An electrical length is defined between the connecting end and the grounding end, and the electrical length is less than &#xbc; of a wavelength corresponding to a lowest operating frequency within the operating frequency band.

Electronic device, and radio-frequency device and signal transmission component thereof

Growing community of inventors

Hsinchu, Taiwan

Kuan-Wei Lin