Melexis Technologies Sa

Kuan-Ting Ho

Lucian Barbut

A semiconductor stack for a Hall effect device, which comprises: a bottom barrier comprising AlGaAs, a channel comprising InGaAs, on the bottom barrier, a channel barrier with a thickness which is at least 2 nm and which is smaller than or equal to 15 nm, and which at least comprises a first layer comprising AlGaAs with 0.1&#x2264;z&#x2264;0.22, wherein the first layer has a thickness of at least 2 nm, wherein a conduction band edge of the bottom barrier and the first layer is higher than a conduction band edge of the channel, a doping layer comprising a composition of Al, Ga and As and doped with n-type material, a top barrier comprising a composition of Al, Ga and As.

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Reutlingen, Germany

Kuan-Ting Ho