Taiwan Semiconductor Manufacturing Comp. Ltd.

Young Optics Inc.

Kuan-Lun Cheng

Chih-Hao Wang

Ching-Wei Tsai

Kuo-Cheng Chiang

Shi Ning Ju

Kuo-Cheng Ching

Cheng-Chi Chuang

Li-Zhen Yu

Lin-Yu Huang

Kuan-Ting Pan

Yu-Xuan Huang

Chia-Hao Chang

Mao-Lin Huang

Jia-Ni Yu

Chung-Wei Hsu

Lung-Kun Chu

Sai-Hooi Yeong

Shi-Ning Ju

Cheng-Ting Chung

Hou-Yu Chen

Jung-Chien Cheng

Zhiqiang Wu

Wen-Hsing Hsieh

Guan-Lin Chen

Yi-Bo Liao

Wang-Chun Huang

Pei-Yu Wang

Chung-Wei Wu

Min Cao

Kai-Chieh Yang

Chi-Hsing Hsu

Chi-Yi Chuang

Bo-Feng Young

Huan-Chieh Su

Zhi-Chang Lin

Chih-Ching Wang

Chun-Yuan Chen

Wei Ju Lee

Jon-Hsu Ho

Yi-Ruei Jhan

Hou-yu Chen

Yen-Ming Chen

Lo-Heng Chang

Chun-Fu Cheng

Wen-Ting Lan

Jiun-Jia Huang

Chien Ning Yao

Tetsu Ohtou

Wen-Yuan Chen

Li-Yang Chuang

Yi-Hsun Chiu

Tzer-Min Shen

Teng-Chun Tsai

Wei-Yang Lee

Jia-Chuan You

Chung-Cheng Wu

Wei-Hao Wu

Kai-Hsuan Lee

Chi-On Chui

Ting-Hung Hsu

Keng-Chu Lin

Jam-Wem Lee

Yasutoshi Okuno

Kuo-Ji Chen

Shang-Wen Chang

Chun-Fu Lu

Chung-I Yang

Jiann-Tyng Tzeng

Wei-Cheng Lin

Yih Wang

Chung-Hui Chen

Chih-Yu Chang

Jung-Hung Chang

Yi-Ming Sheu

Pei-Hsun Wang

Tsung-Hsing Yu

Ming-Chang Wen

Wei-An Lai

Jui-Chien Huang

Bo-Yu Lai

Chih-Pin Tsao

Li-Shyue Lai

Chien-Ning Yao

Wei-Szu Lin

Yu-Chen Chang

Chia-En Huang

Katherine H Chiang

Ka-Hing Fung

Yi-Hsiung Lin

Sheng-Tsung Wang

Chia-en Huang

Yu-Ting Cheng

Ke-Wei Su

Huan-Tsung Huang

Shui-Ming Cheng

Yin-Pin Wang

Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a first base portion and a second base portion, an isolation feature sandwiched between the first base portion and the second base portion, a center dielectric fin over the isolation feature, a first anti-punch-through (APT) feature over the first base portion, a second APT feature over the second base portion, a first stack of channel members over the first APT feature, and a second stack of channel members over the second APT feature. The center dielectric fin is sandwiched between the first stack of channel members and the second stack of channel members as well as between the first APT feature and the second APT feature.

Gap-insulated semiconductor device

The present disclosure is directed to methods for the formation of high-voltage nano-sheet transistors and low-voltage gate-all-around transistors on a common substrate. The method includes forming a fin structure with first and second nano-sheet layers on the substrate. The method also includes forming a gate structure having a first dielectric and a first gate electrode on the fin structure and removing portions of the fin structure not covered by the gate structure. The method further includes partially etching exposed surfaces of the first nano-sheet layers to form recessed portions of the first nano-sheet layers in the fin structure and forming a spacer structure on the recessed portions. In addition, the method includes replacing the first gate electrode with a second dielectric and a second gate electrode, and forming an epitaxial structure abutting the fin structure.

High-voltage nano-sheet transistor

Structures and methods that include a device such as a gate-all-around transistor formed on a frontside and a contact to one terminal of the device from the frontside of the structure and one terminal of the device from the backside of the structure. The backside contact may include selectively etching from the backside a first trench extending to expose a first source/drain structure and a second trench extending to a second source/drain structure. A conductive layer is deposited in the trenches and patterned to form a conductive via to the first source/drain structure.

Semiconductor device having backside via and method of fabricating thereof

A biosensor including a first sensor, a second sensor, a patterned dielectric layer and a cover is provided. The first sensor includes a first voltage-reference device and a first bio-sensing device. The second sensor is disposed adjacent to the first sensor, the second sensor includes a second voltage-reference device and a second bio-sensing device, the first sensor is spaced apart from the second sensor by a lateral distance, and the lateral distance is greater than a half of an average lateral dimension of the first voltage-reference device and the second voltage-reference device. The patterned dielectric layer includes sensing wells located above the first voltage-reference device, the first bio-sensing device, the second voltage-reference device and the second bio-sensing device. The cover includes fluid channels communicating with the sensing wells.

Biosensor

Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Semiconductor device structure

Aspects of the disclosure provide a semiconductor device and a method for forming the semiconductor device. The semiconductor device includes a first channel structure, a first gate dielectric layer surrounding the first channel structure, and a first metal gate surrounding first gate dielectric layer. The first metal gate includes a first metal layer in direct contact with the first gate dielectric layer and a first metal cap in direct contact with the first gate dielectric layer, wherein the first metal cap is in direct contact with the first metal layer.

Semiconductor device and method of forming thereof

A semiconductor structure includes a first stack of active channel layers and a second stack of active channel layers disposed over a semiconductor substrate, where the second stacking include a dummy channel layer and the first stack is free of any dummy channel layer, a gate structure engaged with the first stack and the second stack, and first S/D features disposed adjacent to the first stack and second S/D features disposed adjacent to the second stack, where the second S/D features overlap with the dummy channel layer.

Nanosheet devices with hybrid structures and methods of fabricating the same

A semiconductor device includes channel members vertically stacked, a gate structure wrapping around the channel members, a gate spacer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel members, and an inner spacer layer interposing the gate structure and the epitaxial feature. In a top view of the semiconductor device, the inner spacer layer has side portions in physical contact with the gate spacer and a middle portion stacked between the side portions. In a lengthwise direction of the channel members, the middle portion of the inner spacer layer is thicker than the side portions of the inner spacer layer.

Self-aligned spacers for multi-gate devices and method of fabrication thereof

Embodiments of the present disclosure includes a semiconductor device. The semiconductor device includes first suspended nanostructures vertically stacked over one another and disposed on a substrate, a first gate stack engaging the first suspended nanostructures, a first gate spacer disposed on sidewalls of the first gate stack, second suspended nanostructures vertically stacked over one another and disposed on the substrate, a second gate stack engaging the second suspended nanostructures, and a second gate spacer disposed on sidewalls of the second gate stack. A middle portion of the first suspended nanostructures has a first thickness measured in a direction perpendicular to a top surface of the substrate. A middle portion of the second suspended nanostructures has a second thickness measured in the direction. The second thickness is smaller than the first thickness.

Gate all around transistor device and fabrication methods thereof

A semiconductor device includes a first fin protruding upwardly from a substrate, a second fin protruding upwardly from the substrate, a first gate structure having a first portion that at least partially wraps around an upper portion of the first fin and a second portion that at least partially wraps around an upper portion of the second fin, a second gate structure having a portion that at least partially wraps around the upper portion of the first fin, and a dielectric feature having a first portion between the first and second portions of the first gate structure. In a lengthwise direction of the first fin, the dielectric feature has a second portion extending to a sidewall of the second gate structure.

Method for metal gate cut and structure thereof

A method of forming a fin field effect transistor (finFET) on a substrate includes forming a fin structure on the substrate and forming a shallow trench isolation (STI) region on the substrate. First and second fin portions of the fin structure extend above a top surface of the STI region. The method further includes oxidizing the first fin portion to convert a first material of the first fin portion to a second material. The second material is different from the first material of the first fin portion and a material of the second fin portion. The method further includes forming an oxide layer on the oxidized first fin portion and the second fin portion and forming first and second polysilicon structures on the oxide layer.

Fin isolation structures of semiconductor devices

A semiconductor structure includes an insulator, a semiconductor fin, a gate stack, a gate contact, a source/drain material, and a source/drain contact structure. The semiconductor fin protrudes from the insulator. The gate stack is disposed on the semiconductor fin and the insulator. The gate contact is disposed on and electrically connected to the gate stack. The source/drain material is disposed on the semiconductor fin. The source/drain contact structure is disposed on and electrically connected to the source/drain material. The semiconductor fin extends along a first direction, the gate stack extends along a second direction different from the first direction. An offset S in the second direction between the gate contact and the source/drain contact structure satisfies: 0<S≤(W/2+D/2), wherein W is a width of the semiconductor fin, and D is a dimension of the gate contact.

Semiconductor structure

The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having self-aligned isolation structures. The present disclosure provides self-aligned isolation fins that can be formed by depositing dielectric material in openings formed in a spacing layer or by replacing portions of fins with dielectric material. The self-aligned isolation fins can be separated from each other by a critical dimension of the utilized photolithography process. The separation between self-aligned isolation fins or between the self-aligned isolation fins and active fins can be approximately equal to or larger than the separations of the active fins.

Self-aligned structure for semiconductor devices

The present disclosure provides a semiconductor structure. The semiconductor structure includes device fins formed on a substrate; fill fins formed on the substrate and disposed among the device fins; and gate stacks formed on the device fins and the fill fins. The fill fins include a first dielectric material layer and a second dielectric material layer deposited on the first dielectric material layer. The first and second dielectric material layers are different from each other in composition.

Integrated circuit with a Fin and gate structure and method making the same

The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members vertically stacked above a substrate, a gate structure engaging the channel members, a gate sidewall spacer disposed on a sidewall of the gate structure, an epitaxial feature abutting end portions of the channel members, and inner spacers interposing the gate structure and the epitaxial feature. The end portion of at least one of the channel members includes a first dopant. A concentration of the first dopant in the end portion of the at least one of the channel members is higher than in a center portion of the at least one of the channel members. The concentration of the first dopant in the end portion of the at least one of the channel members is higher than in an outer portion of the epitaxial feature.

Multi-gate devices and fabricating the same with etch rate modulation

Growing community of inventors

Hsin-Chu, Taiwan

Kuan-Lun Cheng