Taiwan Semiconductor Manufacturing Comp. Ltd.

Tpo Displays Corporation

Kuan-Lin Yeh

Kuo-Hua Pan

Ta-Chun Lin

Mu-Chi Chiang

Chun-Jun Lin

Jhon Jhy Liaw

Chun-Sheng Liang

Hsin-Che Chiang

Yuan-Sheng Huang

Chih-Yang Yeh

Pang-Hsuan Liu

Po-Hsueh Li

Chun-Chan Hsiao

A first dielectric layer is formed over upper and side surfaces of a semiconductor fin structure. A mask layer is formed over a first portion of the first dielectric layer disposed over the upper surface of the fin structure. The mask layer and the first dielectric layer have different material compositions. Second portions of the first dielectric layer disposed on side surfaces of the fin structure are etched. The mask layer protects the first portion of the first dielectric layer from being etched. A second dielectric layer is formed over the mask layer and the side surfaces of the fin structure. An oxidation process is performed to convert the mask layer into a dielectric material having substantially a same material composition as the first or second dielectric layer. The dielectric material and remaining portions of the first or second dielectric layer collectively serve as a gate dielectric of a transistor.

Gate dielectric having a non-uniform thickness profile

A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.

Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereof

Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof

In a method of manufacturing a semiconductor device, a dummy gate structure is formed over a substrate. A first insulating layer is formed over the dummy gate structure. The dummy gate structure is removed so as to form a gate space in the first insulating layer. A first conductive layer is formed in the gate space so as to form a reduced gate space. The reduced gate space is filled with a second conductive layer made of a different material from the first conductive layer. The filled first conductive layer and the second conductive layer are recessed so as to form a first gate recess. A third conductive layer is formed over the first conductive layer and the second conductive layer in the first gate recess. After recessing the filled first conductive layer and the second conductive layer, the second conductive layer protrudes from the first conductive layer.

Semiconductor device and a method for fabricating the same

A system for displaying and capturing images is provided. The system includes a display unit, a detection module. The display unit provides a first light according to a scan signal and a data signal. The detection module captures a second light and comprises a photo detection unit, a transformation unit, and a switch unit. The photo detection unit detects intensity of the second light. The transformation unit transforms the light intensity into a voltage signal. The switch unit outputs the voltage signal according to a selection signal.

Image displaying and capturing devices

Growing community of inventors

Hsinchu, Taiwan

Kuan-Lin Yeh