United Microelectronics Corp.

Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Kuan-Hao Tseng

Shih-Hung Tsai

Po-Kuang Hsieh

Yu-Ting Tseng

Samuel C Pan

Jenn-Gwo Hwu

Chien-Shun Liao

Cheng-Ping Kuo

Chien-Ting Lin

Yu-Hsiang Lin

Chueh-Fei Tai

A semiconductor memory device includes a transistor having a gate, a source and a drain and a metal-insulator-semiconductor (MIS) structure. The transistor and the MIS structure are disposed on a common substrate. The MIS structure includes a dielectric layer disposed on a semiconductor region, and an electrode electrically disposed on the dielectric layer and coupled to the drain of the transistor. The electrode includes a bulk portion and a high-resistance portion, both disposed on the dielectric layer. The high-resistance portion has a resistance value in a range from 1.0&#xd7;10&#x3a9;cm to 1.0&#xd7;10&#x3a9;cm or a sheet resistance in a range from 1.0&#xd7;10&#x3a9;/&#x25a1; to 1.0&#xd7;10&#x3a9;/&#x25a1;.

Semiconductor memory device

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Method for fabricating semiconductor device

A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.

Semiconductor device and method for fabricating the same

A manufacturing method of an epitaxial fin-shaped structure includes the following steps. A substrate is provided. A recess is formed in the substrate. An epitaxial layer is formed on the substrate. The epitaxial layer is partly formed in the recess and partly formed outside the recess. The epitaxial layer has a dent formed on the top surface of the epitaxial layer, and the dent is formed corresponding to the recess in a thickness direction of the substrate. A nitride layer is conformally formed on the epitaxial layer. An oxide layer is formed on the nitride layer. A first planarization process is performed to remove a part of the oxide layer, and the first planarization process is stopped on the nitride layer. The epitaxial layer in the recess is patterned for forming at least one epitaxial fin-shaped structure.

Manufacturing method of epitaxial fin-shaped structure

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.

Growing community of inventors

Kaohsiung, Taiwan

Kuan-Hao Tseng