Taiwan Semiconductor Manufacturing Comp. Ltd.

Quanta Computer Incorporated

Inhon International Co., Ltd.

Kuan-Chung Chen

Chun-Fai Cheng

Wei-Yuan Lu

Han-Ting Tsai

Yu-Cheng Chien

Chang-Miao Liu

Ming-Shuan Li

Li-Ping Huang

Kai-Ju Cheng

Haiting Wang

Chih-Wei Sung

Hsien-Ching Lo

Yi-Ling Chen

Hsueh-Jen Yang

Wei-Ching Wang

You-Hua Chou

Chin-Yuan Ting

Yu-Hsun Chen

Shao-Ang Chen

Min-Hao Hong

Fung Ka Hing

Hao-Ping Lee

Hsueh-Chang Sung

Ka-Hing Fung

Ming-Huan Tsai

Chih-Wei Lee

Wei-Han Fan

Cho-Yi Lin

Liang-Yi Chen

Hsin-Lun Hsieh

Jia-Chyi Wang

Tong-Ming Hsu

Chung-Sheng Wu

Jing-Ting Peng

Shun-Chi Yang

Chi-An Wang

A distinguishing device for dental plaque and dental calculus includes a light-emitting diode, an image sensing unit, and a processor. The light-emitting diode movies in a first direction and is separated from teeth in an oral cavity by a predetermined distance in a second direction. The second direction is perpendicular to the first direction. The light-emitting diode generates a blue light to illuminate the teeth, so that dental plaque on the teeth generates a first autofluorescence and dental calculus on the teeth generates a second autofluorescence. The image sensing unit is configured to sense the first autofluorescence and the second autofluorescence. The processor is coupled to the image sensing unit to distinguish a dental plaque area from a dental calculus area on the teeth according to the first autofluorescence and the second autofluorescence.

Device and method for distinguishing dental plaque from dental calculus

A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer

Gate structures for semiconductor devices

A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.

Semiconductor device structure and method for forming the semiconductor device structure

A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer.

The speech correction system includes a storage device, an audio receiver and a processing device. The processing device includes a speech recognition engine and a determination module. The storage device is configured to store a database. The audio receiver is configured to receive an audio signal. The speech recognition engine is configured to identify a key speech pattern in the audio signal and generate a candidate vocabulary list and a transcode corresponding to the key speech pattern; wherein the candidate vocabulary list includes a candidate vocabulary corresponding to the key speech pattern and a vocabulary score corresponding to the candidate vocabulary. The determination module is configured to determine whether the vocabulary score is greater than a score threshold. If the vocabulary score is greater than the score threshold, the determination module stores the candidate vocabulary corresponding to the vocabulary score in the database.

Speech correction system and speech correction method

A tooth-position recognition system includes an electronic device and a calculation device. The electronic device includes a first camera. The first camera is configured to capture a plurality of tooth images. The calculation device includes a second camera and a processor. The second camera is configured to capture a user image. The processor is configured to receive the tooth images, compare the corresponding position of each pixel in each tooth image to generate a depth map, and input the tooth images, the depth map, and a plurality of first tooth-region identifiers into a tooth deep-learning model. The tooth deep-learning model outputs a plurality of deep-learning probability values that are the same in number as the first tooth-region identifiers. The processor inputs the user image and the plurality of second tooth-region identifiers into a user-image deep-learning model.

Tooth-position recognition system

The speech correction system includes a storage device and a processing device. The storage device stores a first database. The processing device includes an audio receiver, a speech recognition engine, a calculation module, and a determination module. The audio receiver receives multiple voice inputs. The speech recognition engine recognizes the voice inputs, generates multiple candidate vocabularies corresponding to each of the voice inputs, and generates a vocabulary probability corresponding to each of the candidate vocabularies. The calculation module performs a specific operation on the vocabulary probabilities corresponding to the same candidate vocabulary, to generate a plurality of corresponding operation results. The determination module determines whether each of the operation results is greater than a score threshold, and stores at least one output result that is greater than the score threshold to the first database.

A method includes delivering a wafer into a process chamber, applying a thermal energy to the wafer by a heat source, and moving the heat source substantially along a longitudinal direction of the heat source with respect to the wafer. An apparatus that performs the method is also disclosed.

Apparatus and method for processing wafer

A method for improving the efficiency of reconstructing a three-dimensional model is provided. The method includes: dividing a series of different Gray code binary illumination patterns into a plurality of groups; converting binary values of Gray code binary illumination patterns in each group to a plurality of sets of two specific values to generate decimal illumination patterns corresponding to the specific values; overlapping the decimal illumination patterns in each group to a grayscale illumination pattern; using a projector to project each grayscale illumination pattern onto an object from a projection direction; using a camera to capture one or more object images of the object; reverting the object images to non-overlapping Gray code binary images corresponding to the object images; and reconstructing the depth of the object according to the non-overlapping Gray code binary images.

Method and device for improving efficiency of reconstructing three-dimensional model

An apparatus for processing a wafer includes a process chamber, a wafer support, a heat source, and a movable device. The wafer support is in the process chamber. The heat source is in the process chamber. The movable device contacts the heat source, in which the movable device is movable with respect to the wafer support.

A semiconductor device includes a dielectric layer on a substrate, a P-type transistor having a first gate stack embedded in the dielectric layer, and an N-type transistor having a second gate stack embedded in the dielectric layer. The first gate stack includes a first metal gate electrode, a first gate dielectric layer underlying the first metal gate electrode, and a first cap layer between the first gate dielectric layer and the first metal gate electrode. The second gate stack includes a second metal gate electrode, a second gate dielectric layer underlying the second metal gate electrode, and a second cap layer between the second gate dielectric layer and the second metal gate electrode. The first and second gate stacks are adjacent, and the first and second metal gate electrodes are separated from each other by the first and second cap layers.

Techniques providing high-k dielectric metal gate CMOS

A heat dissipation control system includes an angle detection module and a control module. The heat dissipation control system is adapted for a portable electrical device having a first body and a second body. The angle detection module senses an included angle of the first body and the second body and generates an angle signal corresponding to the included angle of the first body and the second body. The control module, in response to the angle signal, generates a heat dissipation control signal according to the angle signal for enabling at least one of a first heat dissipation policy and a second heat dissipation policy.

Heat dissipation control system for portable electrical device and control method thereof

A semiconductor device includes a gate structure over a substrate, a source region in the substrate, where the source region is adjacent to the gate structure. Additionally, the semiconductor device includes a drain region in the substrate, where the drain region is adjacent to the gate structure. Moreover, the semiconductor device includes a first dislocation in the substrate between the source region and the drain region. Furthermore, the semiconductor device includes a second dislocation in the substrate between the source region and the drain region, where the second dislocation is substantially parallel to the first dislocation.

Semiconductor device

A method for manufacturing a semiconductor device includes forming a first dummy gate on a substrate, performing a doping process to the substrate, thereby forming a source and a drain at sides of the first dummy gate, performing a first high temperature annealing to activate the source and drain, forming an inter-layer dielectric (ILD) material on the substrate, removing the first dummy gate to create an ILD trench, forming a first high-k dielectric layer within the ILD trench, forming a first dummy cap portion within the ILD trench over the first high-k dielectric layer, performing a second high-temperature annealing to reduce defects in the first high-k dielectric layer, and thereafter, replacing the first dummy cap portion with a first metal gate electrode.

Growing community of inventors

Taipei, Taiwan

Kuan-Chung Chen