National Cheng-kung University

Epistar Corporation

Hiwin Technologies Corporation

Other

National Chung Hsing University

TSMC Solid State Lighting Ltd.

Kuan-Chun Chen

Yan-Kuin Su

Chun-Liang Lin

Hao-Chung Kuo

Zhen-Yu Li

You-Da Lin

Jin-Quan Huang

Shu-Kai Hu

Wu-Teng Hsieh

Shyi-Dong Yeh

Ya-Ling Huang

Ching-Fu Yang

Provided is a strategy for generating transgenic plants with concurrent resistance to DNA and RNA viruses at one construction, so as to develop an RNA-directed DNA methylation (RdDM) transgenic system using a hairpin construct of Ageratum yellow vein virus (AYVV) promoter region residing in an intron to resist DNA virus infection by RdDM. Furthermore, the hairpin construct of the AYVV promoter region coupled with an untranslatable nucleocapsid protein (NP) fragment of Melon yellow sport virus (MYSV) is created to induce post-transcriptional gene silencing (PTGS) against MYSV. A method for providing transgenic plants conferring concurrent resistance to both AYVV and MYSV for control of DNA and RNA virus at the same time, and underlying RdDM and PTGS mechanisms, respectively, is also provided.

Recombinant construct, recombinant microorganism, recombinant plant cell and method of providing plant with resistance against DNA virus and RNA virus

A lighting device includes a plurality of light-emitting diodes including a first light-emitting diode with a non-rectangular shape in a top view, a submount to which each of the plurality of light-emitting diodes is coupled, and a plurality of conductive elements formed between the submount and the plurality of light-emitting diodes to electrically connecting at least a portion of the plurality of light-emitting diodes with each other in series.

Lighting device

A lighting apparatus includes a polygon die including a plurality of light-emitting diodes (LEDs), and a submount to which each of the LEDs is coupled. Each LED includes a plurality of epi-layers which contains a p-type layer, an n-type layer, and a multiple quantum well (MQW) disposed between the p-type layer and the n-type layer, and a p-type electrode and an n-type electrode which are electrically coupled to the p-type layer and the n-type layer, respectively. The p-type and the n-type electrodes are located between the submount and the epi-layers. The submount contains a plurality of conductive elements configured to electrically couple at least a portion of the plurality of LEDs in series. At least some of the plurality of LEDs have non-rectangular top view shapes.

High voltage LED with improved heat dissipation and light extraction

A lubricating device used in a linear transmission mechanism is disclosed to include a housing having an accommodation chamber and an opening formed on the inside and periphery thereof in equal cross section, a pressure member axially movable in the accommodation chamber, a screw rod pivotally mounted in the housing and having a first transmission portion located on one end thereof and extended out of the pressure member, a screw nut threaded onto the screw rod and driven by the screw rod to stop against the pressure member outside, a transmission member defining therein a transmission slot and a second transmission portion and a third transmission portion at two opposite sides of the transmission slot for alternatively rotating the first transmission portion, and driving device for reciprocating the transmission member.

Lubricating device for linear transmission mechanism

A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.

Method for manufacturing heat dissipation bulk of semiconductor device

A semiconductor device and a method for manufacturing the same are described. The semiconductor device comprises: a heat sink having at least one opening passing through the heat sink; at least one semiconductor chip disposed in the opening, wherein the semiconductor chip includes a first side and a second side on opposite sides; an electricity conducting thin film filling in a first depth portion of the opening, wherein the second side of the semiconductor chip is embedded in the electricity conducting thin film; a heat conducting thick film filling in a second depth portion of the opening, wherein the electricity conducting thin film is directly connected with the heat conducting thick film; at least one wire electrically connecting the semiconductor chip and an external circuit; and an encapsulant covering a portion of the heat sink, the semiconductor chip, the wire and an exposed portion of the electricity conducting thin film.

Semiconductor device with heat sink and method for manufacturing the same

An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

Embedded metal heat sink for semiconductor

An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

Embedded metal heat sink for semiconductor device and method for manufacturing the same

A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.

Method for manufacturing heat sink of semiconductor device

The present invention discloses screw bolt and nut with lubricant oil contained ball bush bearing. There is a deep oil storage hole formed in the nut parallel to axial direction of the bolt for storing the lubricant oil. An oil nipple or an oil packing is provided at one end of the deep oil storage hole for preventing leakage of the lubricant oil. A threaded oil dripping hole intersecting the deep oil storage hole with an oil containing member therein is formed in the nut thereby causing the lubricant oil to drip gradually into the spiral grooves and lubricate the rolling balls thereof. The oil containing member can be made of felt, wool, cotton (cloth or thread) or the like. Furthermore, an oil adjusting screw is provided with the oil dripping hole for controlling the flow rate of lubricant oil into the spiral grooves.

Growing community of inventors

Taichung, Taiwan

Kuan-Chun Chen